稠杂环醌式n-型有机半导体

The lack of high-performance n-channel organic semiconductors is a major challenge in the organic transistors. In view of this situation, the applicant intends to carry out the study of design and synthesis of new type high-performance n-channel organic semiconductors. Based on the research basis of the applicant and combining the characteristics of low LUMO energy levels and planar conjugated structures of quinoidal molecules, the present application will design and synthesized series of aza, oxa, thiooxa, thioazo and azoxa polycyclic quinone molecules by means of development of novel conjugated structures and side-chain engineering. With the difference of heteroatom radii, position and electronegativity, and the interactions between heteroatoms, the physicochemical properties and aggregation structures of quinoidal molecules will be modulated. The charge transfer property of quinoidal molecules will be investigated with transistor devices, the feasibility of the application of quinoidal molecules in high-performance copper source / drain electrode transistors will be explored. Additionally, the basic scientific issues in the field of n-type organic semiconductors, such as the relationship between molecular structure, aggregation state and device performance will also studied.

高性能n-型有机半导体的缺乏是当前有机晶体管领域面临的主要挑战。针对这一现状，申请人拟开展新型高性能n-型有机半导体的设计合成及器件研究。基于申请人的研究基础，结合醌式分子具有低LUMO能级和平面共轭结构的特点，本申请从发展新型共轭结构入手，借助侧链工程，设计合成系列氮杂、氧杂、硫氧杂、硫氮杂和氮氧杂稠环醌式分子，利用杂原子半径、位置和电负性的不同以及杂原子间的相互作用调控醌式分子的物理化学性质和聚集态结构，进而构筑器件，测试器件性能，探索醌式分子在高性能铜源漏电极晶体管中应用的可行性，并对n-型有机半导体领域的基本科学问题如分子结构、聚集态和器件性能之间的关系等开展研究。

基于目前n-型有机半导体的研究现状和挑战，结合醌式分子的特点，开展了新结构醌式n-型有机半导体的研究。采用发展新共轭结构和侧链工程等方法，设计合成了系列含有氧、氮等杂原子的醌式分子，并对其物理化学性质、聚集态结构和载流子传输性质进行研究。主要研究成果有：（1）创制了系列醌式n-型有机半导体并构筑了高性能铜/银为源漏电极的晶体管器件，器件的电子迁移率>0.9 cm2/Vs；（2）基于醌式分子具有低LUMO能级的特点，发展了一种新型的器件界面优化方法-自掺杂薄膜方法，并对该方法的原理和普适性进行了探索；（3）系统研究了氧、氮等杂原子的类型、电负性、原子半径和取代位置以及醌式分子构型对分子前线轨道能级、聚集态结构和晶体管器件性能的影响；（4）借助隧道扫描裂节技术对醌式有机半导体分子及其阴离子自由基的单分子电导进行了研究。