原子层沉积微通道板功能层的机理研究

This project propose to overcome the disadvantages of traditional MCP, such as high noise, limited gain which caused by materials and uncontrollable bulk resistance. The Atomic Layer Deposition (ALD) is introduced to improve the gain performance of traditional MCPs, which is commonly used in the field of microelectronics and solid electronics, and fibrate the new MCP base on ALD technology. A new type of MCP based on ALD technology was developed by depositing a conductive layer and a high secondary electron emission layer in the channel to improve the channel conductivity and the secondary emission coefficient and improve the MCP gain. The stacked micro-channel Array (MCA) was used as the substrate of the new MCP to eliminate the introduction of dark noise from radioactive isotopes. At the same time, the modulation of atomic layer technology deposition film model and energy band engineering was studied, and the high-quality conductive layer and secondary electron emission layer matching the energy band were uniformly deposited in the channel of the microchannel plate, so as to reduce the junction potential barrier. At last， reduce the internal defect recombination, improve the MCP gain and extended the lifetime.

本项目针对目前传统型MCP噪声较大、增益受材料限制和体电阻性能无法调控的缺点，将微电子与光电子领域常用的原子层沉积技术（Atom layer Deposition，ALD）引入电真空器件微通道板（Micro-channel Plate，MCP）中，在通道内沉积导电层和高二次电子发射层，提高通道导电能力和二次发射系数的方式提高MCP的增益，并研制基于ALD技术的新型MCP。将堆叠式微管（Micro-channel Array, MCA）作为新型MCP的基板，杜绝了由放射性同位素引入暗噪声；同时，对原子层技术沉积薄膜模型和能带工程的调制研究，在微通道板的通道内均匀沉积能带匹配的、高质量的导电层和二次电子发射层，降低结势垒，减少体内缺陷复合，提高MCP的增益和工作寿命。

本项目针对军用夜视、高能辐射探测、离子探测、电离层探测中核心部件微通道板（MCP）的电阻和增益特性进行研究，针对目前传统型MCP噪声较大、增益受材料限制和体电阻性能无法调控的缺点，将微电子与光电子领域常用的原子层沉积技术引入电真空器件微通道板中，在通道内高性能沉积导电层和高二次电子发射层作为微通道板功能层，提高通道导电能力和MCP的增益，并研制出基于ALD技术的新型MCP。对原子层沉积微通道板电阻层和二次电子反射层进行了细致化的研究，掌握了导电层、二次电子发射层膜层设计技术；通过材料选择，得到可以用于微通道板的电阻层材料，利用Ru：Al2O3掺杂薄膜作为电阻层，实验获得掺杂浓度与电阻关系；通过能带调节技术，降低表面对电子束缚能力，提高了二次电子发射系数，确定采用Al2O3（1nm）/MgO（20nm）双层复合薄膜作为二弟电子发射层，并通过理论总结出二次电子发射特性公式。最终研制成功原子层沉积微通道板，器性能较常规微通道板有较大提升。