硅基等离子天线建模与高效率关键技术研究

The silicon-based plasma antenna has an extensive application prospect which can be used in high-speed wireless communication networks, reconfigurable antennas and smart antennas. However, the model of silicon-based plasma antenna and how to improve its efficiency is the key issues which is urgently needed to be solved. So, the project will carry out the research on model and high efficiency key technologies of silicon-based plasma antenna. Based on semiconductor PN junction theory, the accurate model of the lateral PIN diode will be established. The key to improve efficiency is to decrease the interfacial losses and substrate loss of lateral PIN diode. Using different film passivation intrinsic region of lateral PIN diode which can improve carrier concentration and reduce interfacial losses. Increasing silica buried layer and thinning substrate are used to reduce substrate leakage current and increase substrate resistivity of the lateral PIN diode. In this way, the substrate loss can also be reduced. The surface passivation theory of monocrystalline silicon solar cell and substrate loss theory of silicon-based on-chip antenna which are used to analyze surface passivation and substrate loss theory of lateral PIN diode. The FDTD method is used to analysis the surface passivation layer, silica buried layer and thinned substrate on the impact of electromagnetic radiation of the intrinsic region. At last, we will complete lateral PIN diode’s design and simulation. It’s to verify the correctness of the proposed model and theory. The results of this project which will provide theoretical basis and key technical support for further development of silicon-based plasma antenna.

硅基等离子天线在高速无线通讯网络、可重构天线和智能天线领域有广泛的应用前景。硅基等离子天线模型及如何提高其效率是目前亟待解决的关键问题。为此，本项目将开展硅基等离子天线建模与高效率关键技术研究。以半导体PN结理论为基础，建立横向PIN二极管的精确模型。提高效率的关键是降低其界面和衬底损耗。拟采用不同材料薄膜钝化横向PIN二极管，提高本征区载流子浓度，降低界面损耗；拟采用增加二氧化硅埋层和削薄衬底的方法，减小衬底漏电流和增加衬底电阻率，降低衬底损耗。对单晶硅太阳电池表面钝化理论和硅基片上天线衬底损耗理论进行拓展，用以完成横向PIN二极管表面钝化和衬底损耗的理论分析。采用FDTD方法仿真分析表面钝化层、二氧化硅埋层和削薄衬底对本征区电磁辐射特性的影响。完成横向PIN二极管的设计与仿真，验证所提模型及理论的正确性。本项目研究成果将为进一步开发高效率硅基等离子天线提供理论依据和关键技术支持

硅基等离子天线由按一定方式排列和连接的横向PIN二极管组成，通过控制横向PIN二极管的导通与截止可实现天线的可重构。硅基等离子天线在高速无线通讯网络、可重构天线和智能天线领域有广泛的应用前景。.本项目从经典半导体理论出发，结合PN结理论，用一维理论完成了载流子大注入情况下横向PIN二极管本征区载流子浓度分布的理论分析，完成了横向PIN二级管的理论和物理建模，完成了分析本征区长度、二氧化硅埋层、电极长度、结区掺杂浓度及表面电荷对横向PIN二极管本征区载流子浓度的影响，总结了用于天线设计的横向PIN二极管的一般设计规则。完成了横向PIN二极管本征区电导率分布的仿真分析，阐述了电导率随偏置电压变化的关系，完成了基于横向PIN二极管的半波偶极子天线的设计与仿真，得出了本征区电导率和硅衬底厚度会影响天线的回波损耗系数的结论，给出了用于设计半波偶极子天线的横向PIN二极管及硅衬底的结构参数，总结了降低天线衬底损耗及系统静态功耗的有效设计方法，对基于横向PIN二极管的半波偶极子频率可重构天线进行了试制。. 完成了横向PIN二极管自加热效应的理论分析，完成了自加热效应对本征区载流子浓度的影响分析，完成了不同SOI埋层材料对横向PIN二极管本征区载流子浓度的影响分析，得出了自加热效应会降低横向PIN二极管本征区载流子浓度的结论。得出了通过改变埋层材料增加埋层热导率，可以减弱自加热效应，增加本征区载流子浓度，提高硅基等离子天线效率的结论。提出了一种新型结构的双横向PIN二极管，阐明了双横向PIN二极管的工作原理，结合双横向PIN二极管和波导缝隙天线，提出了一种新型的波导缝隙频率可重构天线，完成了波导缝隙频率可重构天线设计与仿真。提出了多种基于横向PIN二极管的可重构天线，获得了多项实用新型和发明专利。.本项目所取得的成果能够理论指导高效率硅基等离子天线的设计，为新型的频率可重构波导缝隙天线的设计开辟了新思路。