AlGaInAs近红外半导体激光器外延结构的退化机理研究

Owing to the advantages of high modulation speed, low temperature sensitivity of threshold current, better material gain performance, 1.5um AlGaInAs quantum well (QW) lasers have great potential in the application fields of optical communication, eye-safe laser radar. However, the crystal structures of AlGaInAs alloys are complicated. The problems of complexes defect types and significant indium atoms migration limit their popularity and applications. As the premise of realizing high-power long-life diode lasers, the degradation mechanism of AlGaInAs QW would be studied, so as to suitably suppress the formation of defects and the migration behavior of indium atoms..This project investigates the degradation of 1.5um AlGaInAs based active region innovatively from the perspective of carrier dynamics. Through the study of microstructural changes, the formation and evolution of defects, the migration of carrier, the effects of particle migration and composition changes on macroscopic properties are clarified. It can accurately reflect the critical conditions for the degradation of AlGaInAs QWs in the working environment. The failure model of the relationship between microstructure parameters and macro performance parameters would be proposed, which provides an experimental basis for improving the performance and reliability of the device. The project would promote the research process of scholars in the study of AlGaInAs material system.

1.5um AlGaInAs量子阱激光器具有调制速率高、阈值电流温度敏感度低、增益特性好等优点，在光通信、人眼安全激光雷达等领域有巨大的应用潜能。但AlGaInAs体系结构复杂，存在缺陷类型多、In原子迁移过程显著的问题，限制其推广和应用。探索AlGaInAs有源区量子阱的退化机理，从而有针对性的抑制缺陷形成和原子迁移过程，是实现高功率、长寿命激光器的重要前提。.本项目创新性提出从载流子动力学的角度，研究1.5um波段AlGaInAs量子阱激光器有源区发生退化的根本原因。通过研究有源区内部微观结构变化、缺陷形成及演变、载流子迁移过程，明确粒子迁移及组分变化量对宏观性能的影响。能够更精准的体现工作环境中有源区发生退化的临界条件，建立微观结构参数与宏观性能参数关系的失效模型，为改善器件的性能和可靠性提供实验基础，进而推进学者们对四元AlGaInAs材料体系的研究进程。

1.5um AlGaInAs量子阱激光器具有调制速率高、阈值电流温度敏感度低、增益特性好等优点，在光通信、人眼安全激光雷达等领域有巨大的应用潜能。但AlGaInAs体系结构复杂，存在缺陷类型多、In原子迁移过程显著的问题，限制其推广和应用。探索AlGaInAs有源区量子阱的退化机理，从而有针对性的抑制缺陷形成和原子迁移过程，是实现高功率、长寿命激光器的重要前提。本项目创新性提出从载流子动力学的角度，研究1.5um波段AlGaInAs量子阱激光器有源区发生退化的根本原因。通过研究有源区内部微观结构变化、缺陷形成及演变、载流子迁移过程，明确粒子迁移及组分变化量对宏观性能的影响。能够更精准的体现工作环境中有源区发生退化的临界条件，建立微观结构参数与宏观性能参数关系的失效模型，为改善器件的性能和可靠性提供实验基础，进而推进学者们对四元AlGaInAs材料体系的研究进程。