基于缺陷工程构建的新型二维硫化钼稀磁半导体材料及其自旋电子调控

There is an intense interest in the research of spintronics materials based on 2D materials (i.e. metal dichalcogenides) due to its many extraordinary physical and chemical properties. However, to realize both high spin polarization and spin manipulation together remains a major challenge. We aim to tailor the properties of 2D materials with effective element doping using the recently developed non-equilibrium growth method, low energy ion implantation /surface engineering technique and defect engineering (orientated doping) to fabricate the new type of diluted magnetic semiconductors. The mechanism of the formation of defects/complex defects and the relationship of defects and dopants in 2D materials will be explored by both theoretically and experimentally. The mechanism of ferromagnetic ordering, spin manipulation will be investigated in detail to achieve a high quality diluted magnetic semiconductor with high polarization and high magnetic uniformity, which will have significant impacts on the next-generation devices-with low power and high speed and low releasing heat.

二维材料因独特的物理化学性质，用其构建新型、高性能稀磁半导体材料从而实现自旋电子器件应用受到了广泛的关注。然而，二维半导体材料中电子高度极化及自旋电子有效调控是当前的重要挑战。针对这一难题，本项目拟采用全新的非平衡生长技术、低能等离子体表界面掺杂技术和缺陷引导的定向掺杂技术构建新型掺杂二维硫化钼稀磁半导体材料，通过实验和理论计算对磁性机理和来源进行探索，研究缺陷和复合缺陷的形成机制，缺陷和掺杂物在二维材料中分布及对材料性能的影响，阐明铁磁有序和自旋电子调控机理，实现高度极化、高磁性、均匀性新型二维材料稀磁半导体，从而为开发下一代低功耗、高速、低热量的自旋电子器件材料提供理论依据和实验基础。

二维材料在自旋电子器件上的应用越来越受到人们的关注。然而，实现高自旋极化和对自旋电子的有效调控是人们的一个挑战。在本课题中，我们运用非平衡生长技术，表面技术和缺陷工程对二维材料进行掺杂。并通过实验和理论计算对磁性机理和来源进行探索。此项目的目标是开发一种高度极化，高磁性均匀性的基于二维材料的稀磁半导体。此项目对下一代低功耗，高速，不产生热量的自旋电子器件将产生巨大的影响