硅基低维纳米结构和硅量子点发光的激活与选模问题研究

It is important for building coherent emission source on silicon chip that the activation of emission and the selection of modes on quantum dots of silicon are studied. The low-dimensional nanostructures and quantum dots on silicon can be fabricated by using nanosecond pulse laser combining with annealing. They can be activated for emission by preparing in oxygen,nitrogen or air atmosphere,in which the quasi-direct band construction is formed for setting energy levels of emission. The properties of breaking-symmetry due to sharper surface and passivation bonds on silicon quantum dots will be investigated which can form the localized states in gap. In a nano-laser of Si quantum dots, the smaller Si quantum dots fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement effect. We can fabricate the multiple layers construction of photonic crystal by combining PLE and PLD method. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional photonic crystal is used to select modes in the nano-laser. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal. This kind of the coupling has a switch effect to emission of an active center in single quantum dot remarked by its size and its localized state which is available to the quantum communication, the quantum information process and the quantum computing scheme in future. It is advantaged because of abundant silicon resource and solid information industry in Guizhou that the optics fabrication system for activation of emission and the selection of modes on quantum dots of silicon will be built.

研究硅基低维纳米结构和硅量子点发光的激活与选模问题，是为硅基芯片级光互联和量子信息处理提供相干光源的关键环节。用各种波长的纳秒脉冲激光加工结合高温退火方法在氧气、氮气或空气等不同氛围下制备并激活硅量子点，在能带结构中形成准直接跃迁带系，在硅基上构造高亮度发光和纳米激光的能级系统；从物理层面探索量子点表面的大曲率与表面非饱和键合形成的系统对称性破缺特性而形成的带隙局域态，由此构建硅量子点发光的激活能级。用脉冲激光等离子体刻蚀与沉积复合方法在硅基上制备含量子点的Purcell腔阵列的二维光子晶体结构及其多层超晶格结构，用其发光缺陷局域态与量子点表面键合局域态偶合实现选模；提出用纳米结构尺寸与表面键合发光局域态来标识硅量子点，用光子量子点缺陷局域态对应进行筛选偶合，获取单量子点发光信息识别与编码。结合贵州丰富的硅材料资源和较好的信息产业基础，建立光子制备硅基低维量子结构与发光激活的仪器系统。

我们研究硅基低维纳米结构和硅量子点发光的激活与选模问题，是为硅基芯片级光互联和量子信息处理提供相干光源的关键环节。四年来我们从物理层面探索量子点表面的大曲率与表面非饱和键合形成的系统对称性破缺特性而形成的带隙局域态，由此构建硅量子点发光的激活能级；我们用各种波长的纳秒脉冲激光加工结合高温退火方法在氧气、氮气或空气等不同氛围下制备并激活硅量子点，在能带结构中形成准直接跃迁带系，在硅基上构造高亮度发光和纳米激光的能级系统；我们用脉冲激光等离子体刻蚀与沉积复合方法在硅基上制备含量子点的Purcell腔阵列的二维光子晶体结构及其多层超晶格结构，用其发光缺陷局域态与量子点表面键合局域态偶合实现选模；我们已经初步建立起光子制备硅基低维量子结构与发光激活的仪器系统。.在英国《自然》杂志子刊、美国OL期刊与德国NSRL期刊等国际重要学术期刊上发表SCI与EI收录论文21篇；申请发明专利6项和实用新型专利6项，获授权发明专利2项与实用新型专利5项。获贵州省科学进步奖一项（2015年第一获奖人）。参加国际学术会议6次；组织国际和国内学术交流3次；学术合作交流5次。促进相应的学科点和学位点的建设与发展，为西部培养相关的专业人才，培养该学术方向的研究生6人。.在华盛顿国家会议中心出席“国际纳米科学技术交流互联大会”并作大会邀请发言；参加与北京大学物理学院共同主持与承办全国“硅基光电子学术会议”（在贵州大学举办）；特邀参加台湾师范大学主办的“国际自动化与智能学术研讨会”并主持“光子加工与制备分会”作邀请发言；四次参加“硅基光电子性质研讨会”并作邀请发言；与南开大学共同主持与承办“凝聚态光学研讨会”并作邀请发言；三次参加中国物理学会年会并作大会发言。.邀请英国Lancaster大学物理系的庄教授到贵州大学纳米光子物理研究所进行学术交流，邀请南开大学物理系的吴博士到贵州大学纳米光子物理研究所进行学术交流；邀请中国科学院半导体研究所李树深院士来贵州大学我们小组访问并作学术报告；邀请中国科学院技术物理研究所沈学础院士来贵州大学我们小组访问并作学术报告；并举办相关的学术论坛。