纳米硅激光中的弯曲表面效应及其对光子调控的研究

It is important for building coherent emission of nanosilicon on based silicon chip, in which the curved surface (CS) effect on nanosilicon plays a main role in the activation of emission and the photonic manipulating. The CS effect breaks symmetrical shape of nanosilicon on which some bonds can produce localized electron states in band gap. The investigation in calculation and experiment demonstrates that the different curvature on bonding surface of nanosilicon can form the various distribution of the electron states and the bonding energy. The CS effect is different from the quantum confinement (QC) effect in nanophysics, which is independant on the sizes of nanostructures. The some new properties can be discovered with the CS effect in nanosilicon emission. In the nanolaser, the CS effect is important for activating emission matter and manipulating emission wavelength. It will be studied that the electron states localized in band gap on quantum dots or quantum wires can be formed due to curvature changing on bonding surface in CS effect whose physical model will be proposed. Here,the stimulated emission on nanosilicon will be obtained in the PL and the EL way. The laser wavelength can be manipulated into the window of the optical fibre communication. The coherent source with single quantum dot (QD) and single photon can be provided with the marking by the CS effect on nanosilicon,which is valuable in the quantum information process and the quantum computing in future. We can fabricate the nanosilicon structures by combining PLE and PLD methods with our patent and detect the spectra on samples by using the PL-EL instrument with our patent.

纳米硅发光在硅基光子集成芯片研究与发展中起着重要作用，其中纳米硅弯曲表面键合效应（CS效应）在发光激活与光子调控等过程中扮演着重要角色。弯曲的硅纳米结构引起系统对称性破缺，致使某些表面键合于能带的带隙中形成局域电子态，实验与计算研究表明：在硅量子点不同曲率表面上形成键合的结合能和电子态分布明显不同。这种新的CS效应与量子受限（QC）效应完全不同，它揭示了纳米物理的一些新的奇妙特性。研究CS效应对于硅纳米激光中工作物质的发光激活及其发光波长的调控有重要价值。我们将系统地在硅量子点和硅量子线上深入研究弯曲表面不同曲率处各种键合的结合能及其电子局域态分布，给出对应的CS效应物理模型；由此实现纳米硅上的PL和EL激射，实现纳米硅激光波长与光通信波段的接口；提供硅基上以CS效应标识的单量子点和单光子源。纳米硅的制备研究主要在PLE-PLD脉冲激光复合加工系统（已获专利授权）上进行。

我们基本按研究计划进行工作，其中根据实际研究情况进行了调整。研究结果证明纳米硅发光在硅基光子集成芯片制备与发展中起着重要作用，其中纳米硅弯曲表面键合效应（CS效应）在发光激活与光子调控等过程中扮演着重要角色；弯曲的硅纳米结构引起系统对称性破缺，致使某些表面键合于能带的带隙中形成局域电子态，实验与计算研究表明：在硅量子点不同曲率表面上形成键合的结合能和电子态分布明显不同；这种新的CS效应与量子受限（QC）效应完全不同，它揭示了纳米物理的一些新的奇妙特性；研究CS效应对于硅纳米激光中工作物质的发光激活及其发光波长的调控有重要价值；我们系统地在硅量子点和硅量子线上深入研究了弯曲表面不同曲率处各种键合的结合能及其电子局域态分布，给出对应的CS效应物理模型；由此实现纳米硅上的PL和EL激射，实现纳米硅激光波长与光通信波段的接口；纳米硅的制备研究主要在PLE-PLD脉冲激光复合加工系统（已获专利授权）上进行。建设了用脉冲激光制备纳米硅及其硅纳米激光的实验研究平台；完善了纳米硅的电泵浦发光检测与光泵浦发光检测综合实验研究平台。其研究结果在《Scientific Reports》、《Appl.Surface Sciences》和《Optic Letter》等国际重要学术期刊上发表，其相关内容的学术论文被SCI收录23篇。