基于场致光发射机理的MOS栅控高效硅发光新结构研究

The silicon light source is one of the most important devices to realize the on-chip optical interconnect. At present, the low luminous efficiency is a major obstacle to the optical interconnection of the chip, and is also the key issue of the study of these devices. The distribution of carriers is one of the main factors to determine the luminous efficiency. In a lot of work on the basis of preliminary studies, the project proposes the idea of an applied electric field to enhance the luminous efficiency. By introducing the electric field control, both the carrier distribution and the carrier ionization rate are controlled, and the reverse breakdown voltage is reduced to make the breakdown expand a small area to the surface. The Si based light emitting device (Si-LED) is also compatible with the standard CMOS process technology. It is expected to overcome the shortcomings of Si-LED’s low efficiency and to realize on-chip optical interconnect and quantum electronics for all silicon integration on a single chip fundamentally, thus providing the inestimable scientific and application value in near future.

硅基光源具有与硅IC兼容的突出优点，是未来硅IC实现片内光互连、解决金属互连因线宽太窄造成引线电阻过大影响电路正常工作的难题所用的最佳光源，但是硅基光源与化合物光源相比，发光强度十分微弱。因此，提高硅基器件的发光效率是硅基光电互连集成领域的研究热点、难点。虽然在此方面已经进行了许多有益的尝试，提出了大量的新理论、新技术，对提升硅光源发光效率有一些作用，发光强度也从几nW提高至100nW，但是未能从根本上解决硅光源发光效率低的问题，难以达到实用化。针对此问题，本项目提出MOS栅控硅发光新结构，借助引入的电场控制端，实现对载流子分布控制，将反向击穿电压降低，击穿区域从点扩展到面，发光强度提高至mW量级，实现发光效率的提升，从根本上克服高速硅IC光互连中硅光源发光效率低的缺点，为真正实现高速硅IC光互连、光量子通信提供有力支撑，对未来全硅光电集成带来巨大的推动作用。

硅基光源具有与硅IC兼容的突出优点，是未来硅IC实现片内光互连、解决金属互连因线宽太窄造成引线电阻过大影响电路正常工作的难题所用的最佳光源，但是硅基光源与化合物光源相比，发光强度十分微弱。因此，提高硅基器件的发光效率是硅基光电互连集成领域的研究热点、难点。虽然在此方面已经进行了许多有益的尝试，提出了大量的新理论、新技术，对提升硅光源发光效率有一些作用，发光强度也从几nW提高至100nW，但是未能从根本上解决硅光源发光效率低的问题，难以达到实用化。针对此问题，本项目提出了MOS栅控硅发光新结构，借助引入的电场控制端，实现了对载流子分布控制，将反向击穿电压降低，击穿区域从点扩展到面，发光强度提高至mW量级，实现发光效率的提升，从根本上克服了高速硅IC光互连中硅光源发光效率低的缺点，为高速硅IC光互连、光量子通信的实现提供了有力支撑，对未来全硅光电集成带来巨大的推动作用。