基于载流子可控场致光发射硅器件电光调制技术基础研究

The electro-optic modulation technology in Si light emitting-device is the key issue. Si-based optoelectronic devices manufactured by advanced process technology satisfies the requirement for optic communications, monolithic integration of Si-based optoelectronic devices also has been developed a lot, but the obstacle in modulation technology is the material of Si. By controlling the refractive index and optimizing the absorption coefficient in Si, the waveguide qualified for electro-optic modulation in Si devices is achieved. In addition to the compatibility with Si IC technology, the novel MOS-like Si optical source could realize multi-terminal electro-optic modulation with high frequency response via monolithic integration on a single Si chip, thus providing the inestimable scientific and application value in near future.

硅发光器件的调制技术是硅基光互连领域的研究热点、难点。本项目在前期高发光效率硅光源结构研究基础上，拟从MOS电容结构两侧积累电荷量大小入手、以缩短MOS电容的充放电时间为主要目标，开展外加电场对硅基电光调制器件调制速度提升的研究。提出与标准CMOS工艺兼容的MOS型场致硅基电光调制器件结构，优化类MOS电容结构两侧扩散区载流子浓度的分布，降低在此区域的光损耗，使MOS电容充放电过程逐渐向瞬态逼近，载流子穿越耗尽区的时间在强电场的作用下近一步降低，从而大大提高调制效率、提升调制速度，有望从根本上解决硅基电光调制受硅材料自身特性限制的瓶颈，为真正实现多端口可控硅电光调制，高速响应、集成化发射光源提供有力支撑，为未来集成光子集成器件发展带来新一轮技术变革。

硅发光器件的调制技术是硅基光互连领域的研究热点、难点。本项目在前期高发光效率硅光源结构研究基础上，从MOS电容结构两侧积累电荷量大小入手、以缩短MOS电容的充放电时间为主要目标，开展了外加电场对硅基电光调制器件调制速度提升的研究。提出与标准CMOS工艺兼容的MOS型场致硅基电光调制器件结构，优化了类MOS电容结构两侧扩散区载流子浓度的分布，降低了在此区域的光损耗，使MOS电容充放电过程逐渐向瞬态逼近，载流子穿越耗尽区的时间在强电场的作用下近一步降低，从而大大提高了调制效率、提升了调制速度，从根本上解决了硅基电光调制受硅材料自身特性限制的瓶颈，为真正实现多端口可控硅电光调制，高速响应、集成化发射光源提供了有力支撑，为未来集成光子集成器件发展带来新一轮技术变革奠定了坚实的基础。