感应耦合等离子体刻蚀下GaN发光的原位测量及其损伤研究

Recently, the plasma etching of GaN and its related semiconductor materials is one of the central topics. Previous works have mainly focused on the plasma-induced effects on the optical properties of GaN by using various ex-situ physical measurements after etching, because the plasma usually exhibits sharp luminescence with wide range of wavelengths. But in order to analyze the properties and control the quality of the materials, in-situ measuring is very important in the study and application. Based on this, the project will in situ measure GaN photoluminescence under inductively coupled plasma etching and analyzes its damages by using the method combining experimental research and theoretical calculation results, and will reach the following goals. (1) Grasping the technology of in situ measuring GaN photoluminescence under inductively coupled plasma etching, and discovering the photoluminescence characteristics;(2) Determining various structure characteristics (including surface morphology, microstructures and component) of the samples and electronic properties (including I-V，C-V curves), discovering the generation mechanism of the defect and damages; (3) Discovering the relation of the damages and photoluminescence characteristics, consequently controlling the damages by in situ measuring GaN photoluminescence under plasma etching. Through these studies, it will broaden the application of plasma, promote the level of measuring and analyzing properties of GaN, fully understand the plasma influence of damages and GaN photoluminescence characteristics, and lay the solid theoretical and experimental foundation for GaN optoelectronic device applications.

等离子体对GaN及其相关半导体材料的刻蚀作用是备受关注的研究热点。由于等离子体本身具有很高的发光强度，GaN的发光通常是刻蚀后测量获得的，但在研究和应用中，往往希望实时监测其性能的变化并对其加以分析和控制。基于此，本项目拟通过实验研究和理论分析相结合的办法，对感应耦合等离子体刻蚀下GaN发光的原位测量及其损伤进行深入研究，将达到以下目标：（1）研究GaN在等离子体刻蚀下光致发光的原位测量技术，获得其发光特性；（2）获得样品刻蚀后的结构信息（如表面形貌、微观结构和组分比等）和电子特性（如I-V、C-V特性等），探究缺陷损伤的产生机制；（3）揭示其发光特性与损伤之间的关系，从而通过实时监测GaN在等离子体刻蚀下的发光来控制其损伤。通过本项目的研究，拓宽等离子体的应用范围，提高GaN的检测和分析水平，加深对GaN发光特性和损伤机制的认识，为GaN光电子器件的进一步发展提供理论依据和技术支持。

针对GaN及其相关半导体材料是备受关注的研究热点，本项目对感应耦合等离子体刻蚀下GaN的光致发光进行了原位测量，并对其损伤进行了深入分析研究。首先，改进并搭建一套滤波系统和同步调制的光谱探测系统，并控制等离子体噪声对GaN发光的影响，完成了在不同偏压和不同功率氩等离子体刻蚀下GaN光致发光的原位测量，实现了光致发光的原位测量技术方法，并分析了其发光强度随时间的变化。其次，研究了不同气体（例如氮气、氯气等）等离子体下GaN发光的原位测量，并分析不同气体氛围对GaN发光特性的影响，以及其损伤的产生的可能机制。最后，深入地研究了GaN在等离子体刻蚀下其深层次缺陷的产生行为，并揭示了其发光特性与其损伤之间的关系。总之，研究结果表明，虽然等离子体本身具有很高的发光强度，但是通过此技术方法能实现在感应耦合等离子体刻蚀下半导体发光的原位测量。另外，GaN的发光特性跟其刻蚀后有效载流子浓度和表面形成的缺陷和扩散有密切相关。.本项目基本按照原计划进行，并完成了计划的所有研究工作。截止目前为止，本项目共发表学术论文11篇，其中SCI期刊论文11篇；申请发明专利1项。.通过本项目研究，拓展了GaN的检测技术，加深对GaN发光特性和损伤机制的认识，为GaN及其相关光电子器件的进一步发展提供理论依据，并为工业化应用打下基础。.