太赫兹InP基HEMT抗质子辐照加固方法和机理研究

InP-based high electron mobility transistors (HEMTs) have shown great potential for space applications, such as national defense, aerospace and satellite radar. However, the reliability research about radiation rarely involves anti-radiation device structure and technology techniques. Proton is one of the main particles in space environment, and thus the project takes the proton radiation hardness techniques and mechanism of InP-based HEMTs as the research objects. The main research contents include: Firstly, device structure with multiple Si-doping planes has been put forward to increase the native carrier concentration, and improve the proton radiation tolerance. The proton radiation hardness mechanism of that structure has been studied through many measures, including the characterizing of radiation-induced defects, the non-ionization energy loss, the charge-controlling model with radiation-induced defects, simulation with Sentaurus and so on. Secondly, passivation with benzocyclobutene (BCB) is proposed to improve the proton radiation tolerance. The radiation hardness mechanism of BCB passivation is systematically investigated on the basis of experiments about quantum well structure. Thirdly, microwave annealing process is proposed as an anti-radiation technique to restore device performances by eliminating radiation-induced defects. Based on the theoretical study about the selective heating of microwave annealing, the restoration effect of proton radiated InP-based HEMTs is discussed by combining the microwave annealing experiments on InGaAs material, InAlAs material and quantum well structure. The above researches could provide theoretical basis and technical support for the space applications of InP-based HEMTs.

InP基高电子迁移率晶体管（HEMTs）对于国防航天和卫星雷达等空间应用极具潜力，然而相应的抗辐照器件结构和工艺加固方法却鲜有报道。鉴于空间环境中质子含量极为丰富，本项目拟进行InP基HEMT抗质子辐照加固方法和机理研究。主要内容包括：1、提出多掺杂外延结构，增加沟道原生载流子浓度，提高器件抗质子辐照能力。结合辐照诱生缺陷表征、非电离能量损失、辐照电荷控制模型和Sentaurus软件仿真等方法，分析多掺杂器件抗质子辐照机理；2、提出基于苯并环丁烯（BCB）钝化工艺的加固方法。基于量子阱钝化工艺实验，分析BCB钝化防护机理；3、提出微波退火修复质子辐照损伤的加固工艺。基于微波退火选择性加热的理论研究，并结合InGaAs、InAlAs材料和量子阱的微波退火实验，分析微波退火修复器件质子辐照损伤的机理。通过以上内容的研究，为推动InP基HEMTs与电路模块在空间领域的应用提供理论基础和技术支撑。

InP基高电子迁移率晶体管（HEMTs）具有高频率、低噪声等优势，对于国防航天和卫星雷达等空间应用极具潜力。空间环境中质子和电子含量极其丰富，将不可避免对器件造成辐照损伤影响，抗辐照加固是推进器件和相关集成电路空间长寿命、高可靠应用而亟需解决的问题。本资助项目主要研究内容和结论包括：①双掺杂层增加了沟道原生载流子浓度，InGaAs/InAs/InAlGaAs复合沟道可提高沟道对载流子的限域能力、降低缺陷对载流子的捕获几率。结果显示：沟道双侧掺杂和沟道上双掺杂、复合沟道结构的辐照耐受性都高于常规结构；②基于苯并环丁烯(BCB)材料进行器件钝化加固，结合良好的表面态去除工艺，器件异质结材料层诱生缺陷浓度减少，将增强器件辐照耐受性；③开展了2MeV和10MeV质子辐照实验：当辐照剂量分别达到1×1013cm-2和5×1013cm-2后，器件特性开始退化。随着辐照剂量增加，沟道电流下降，阈值电压正移。器件跨导在低栅压区域表现出更大的斜率，峰值处出现坍塌，高栅压区域和辐照前保持一致。10MeV质子引起的退化弱于2MeV质子；④质子辐照损伤机理：基于Sentaurus-TCAD软件建立了器件辐照物理模型，研究了缺陷种类、能级、浓度、位置分布对器件特性的影响，确定了异质结区域诱生受主缺陷造成低剂量下迁移率散射和高剂量下载流子去除的损伤机理；⑤开展了1MeV电子辐照实验，提出诱生表面态和缺陷通过散射造成电子迁移率降低的损伤机制。辐照减弱沟道碰撞电离，造成kink现象减弱。栅接触界面态和势垒区缺陷增大了电子隧穿几率，栅漏电增加，理想因子增加，势垒高度降低；⑥常规热退火和微波退火可修复辐照诱生缺陷，辐照器件特性表现出一定程度恢复。本资助项目研究将为InP基HEMT器件和相关集成电路的空间应用提供重要的科学理论指导和实际经验支撑。