太赫兹频段InP基HEMT器件模型研究

In this subject, three scientific problems will be solved: growth dynamics of InP based HEMT material and control of the mobility, transport mechanism of carriers on the nanoscale and the modeling method for InP based HEMT in terahertz band. It will be realized that Atomic level control of the InP based material's key parameters such as defects, doping and interface by researching the material's epitaxy growth kinetics, and it will provide theoretical basis for epitaxy growth and design. It will be researched that the effect of doping method and doping behavior on carriers mobility, and a variety of scattering mechanism will be discussed for improving the mobility of the carriers. The conflict between frequency characteristics and breakdown voltage of InP based HEMT will be solved by study on the transport mechanism and short channel effect of carriers. The law of scale down will provide theoretical basis for the application of InP based HEMT in higher frequency. By combining Montecarlo Simulation and full-wave analysis, the model of InP based HEMT in terahertz band will be established,and in order to prove the validity of the approach, semiconductor technology concerned will be discussed.

本课题拟解决的三个科学问题分别为：InP基HEMT材料生长动力学与迁移率控制、太赫兹频段纳米尺度下载流子的输运机理以及太赫兹InP基HEMT器件的建模方法。通过对InP基HEMT材料原子级外延生长动力学的研究，实现对InP基材料缺陷、掺杂和界面等关键参数的原子级调控，为外延生长和外延结构设计提供理论依据；研究掺杂方式和掺杂行为对载流子迁移率的影响，研究多种散射的机理，提高载流子的迁移率；研究InP基HEMT器件中载流子的输运机理和短沟道效应，从能带角度研究解决InP基HEMT频率特性与击穿电压之间的矛盾；研究并探索InP基HEMT器件的等比例缩小规律，为实现其在更高频率上的应用提供理论指导；在此基础上，将蒙特卡罗模拟与电磁场全波求解结合，探索太赫兹频段InP基HEMT器件的建模方法，并通过相关工艺进行器件模型验证和测试。

太赫兹波（0.1～10 THz）技术在太赫兹成像、通信和频谱等领域有广泛的应用前景，InP赝配高电子迁移晶体管（PHEMT）凭借导带偏移量大、电子迁移率和二维电子气（2DEG）浓度高、低功耗和低噪声等优点，成为太赫兹频段最有竞争力的半导体器件。太赫兹InP PHEMT固态器件及单片集成电路（MMIC）已成为国际上广泛研究的热点。为了推动我国太赫兹技术的快速发展，打破国外的技术封锁，四年来，本创新团队发挥研究人员知识交叉、优势互补的特点，坚持半导体材料、器件、模型和单片电路相结合，理论与实验相结合。重点围绕太赫兹InP PHEMT器件研制，在片校准、测试和去嵌入，等效电路模型及MMIC放大电路设计等方面开展系统性研究工作，致力于对具有共性的科学问题的探讨和研究，建立了器件的物理模型，获得了高截止频率的InP PHEMT器件，开展了在片校准和测试、去嵌入技术研究，并建立了器件的宽带等效电路模型，基于此模型，设计了两款太赫兹频段MMIC放大电路（均为国内首次报导），从而验证了器件模型的准确性。本项目共发表论文13篇，其中SCI刊源6篇，EI刊源3篇，EI会议检索论文4篇，申请与本课题相关的国家发明专利5项。