自限制生长类石墨烯二维材料及其在柔性光电器件中的应用

The graphene-like two-dimensional materials, especially transition metal chalcogenides, owning specific electronic band structure that changes with the layer number, exhibit unique optoelectronic characteristics. Therefore, they have shown significant application prospects in the next-generation flexible nano-electronic devices. This project is mainly aiming at exploring the self-limiting growth of the graphene-like two-dimensional materials, and the fabrication and performance of their flexible optoelectronic devices. We are aimed at the self-limiting growth of the graphene-like two-dimensional materials on target substrates, including flexible substrates, by introducing the metal vapor to prevent the extra adsorption of the precursor on the surface of these materials. By utilizing the unique properties of new-type liquid substrates, we target to prepare the graphene-like two-dimensional materials with controllable layer number, and develop new sliding method to achieve the transfer of the materials to the flexible substrates. And we will develop the new methods to fabricate the flexible electronic devices of the graphene-like two-dimensional materials, and study the influences of strain on their bandgap and performance of electronic transport, photoelectric response and memory behavior. This project will lay the foundation for developing high-performance flexible optoelectronic devices based on the graphene-like two-dimensional materials which owning specific band gap.

以过渡金属二硫属化合物为代表的类石墨烯二维材料，其能带结构随着层数的改变而变化，进而表现出独特的光电特性，在未来的新型柔性纳电子器件的构建中具有重要的应用前景。本项目拟主要探索类石墨烯二维材料的自限制生长及其柔性光电器件的构筑方法和性能研究。具体研究内容包括：通过引入金属蒸气阻止材料表面前驱体的过量吸附，实现类石墨烯二维材料在目标基底（含柔性基底）上的自限制生长；利用新型液态生长基底的独特性质，制备层数可控的类石墨烯二维材料，并发展借助液态界面实现滑移转移至柔性基底的新方法；发展类石墨烯二维材料柔性电子器件的新型构筑方法，研究应力对其带隙及器件电子输运、光电响应及记忆效应等性质的影响。该项目的开展将为发展具有特定带隙的高性能类石墨烯二维材料柔性电子器件奠定基础。

由于量子限域效应，二维材料表现出独特的物理化学性质。其能带结构对层数非常敏感，故而若想推进其实际应用，需要实现其自限制生长以获得层数均匀的材料。本项目研究的主线是利用液态金属，实现类石墨烯的二维材料的自限制生长，为其基础性质研究和器件应用奠定基础。本项目开拓了非传统范德华层状材料的二维材料的自限制生长研究，并取得了一系列创新性成果。实现了强层间作用层状材料MAX相、非层状III-V族半导体、过渡金属磷化物的自限制生长；构筑了具有高绝缘性的新型超薄氧化锑单晶；拓展了液态金属基底的，发展了液态玻璃生长基底，实现了单层过渡金属二硫族化合物本征/ 掺杂单晶的制备，并基于液态基底的可变形性，实现了对所生长的二维材料的带隙的连续、精确、均匀、批量调节。基于所构筑的均匀层数的二维材料，探索了在超导、磁学、光电探测等领域的应用。