硅基双微环-非对称MZI可调谐窄线宽激光器研究

As a key technology of the next generation to solve the bottleneck of information and data transmission, silicon photonics has broad application prospects. Silicon laser, as its key component, needs to provide widely tunable narrow-linewidth input optical signal to an optical network. But, the traditional silicon-based laser can not meet the demands, because there exists a trade-off relationship between the spectral linewidth and the gain difference between longitudinal modes, or do not have widely wavelength-tunability. In the view of this bottleneck, We propose a novel silicon-based monolithically integrated laser using double-ring-asymmetric-MZI. By investigating the competition mechanism between the double ring filter’s spectral linewidth and the longitudinal modes gain difference, as well as the wavelength tuning mechanism of the double-ring-asymmetric-MZI，a laser with linewidth narrower than 10 kHz, wavelength tunning range larger than 50 nm and side-mode suppression ratio higher than 40 dB can be achieved by electron beam lithography, thin bonding and other micro-nanofabrication technologies on SOI waveguide. Our proposed laser will meet the demand of the digital coherent optical communication for ultra high-speed and large-capacity communication bandwidth. The research of this project will provides competitive laser for on-chip integration technology, which has high speed, high capacity, low cost, and low consumption

硅光子技术作为下一代解决信息和数据传输瓶颈的关键技术具有广阔的应用前景，硅基激光器作为其核心器件，需要为光网络提供窄线宽及波长宽调谐的输入光信号，以满足数字相干光通信对超高速、超大容量通信带宽的使用要求。而传统结构的硅基激光器因在光谱线宽和纵模增益差之间存在权衡关系，或不具备波长宽调谐能力，难以满足上述要求。针对该瓶颈技术，提出一种基于双微环-非对称MZI谐振器和宽带环形反射器的硅基单片集成激光器，通过解决双微环谐振器光谱线宽与纵模增益差的竞争机制问题和双微环-非对称MZI波长宽调谐机理问题，利用电子束刻蚀、超薄键合等微纳加工手段，在SOI光波导上实现频率线宽≤10 kHz、波长调谐范围≥50 nm、边模抑制比≥40 dB的激光输出。本项目的研究将为高速、高容量、低成本、低功耗的片上集成技术提供有竞争力的激光光源。

硅基激光器作为硅光子技术的核心器件，需要为光网络提供窄线宽可调谐输入光信号，以满足数字相干光通信对超高速、超大容量通信带宽的使用要求。针对传统结构硅基激光器光谱线宽不够窄或不具备波长宽调谐能力的技术瓶颈，提出一种基于双微环-非对称MZI的硅基单片集成激光器，通过解决双微环谐振器光谱线宽与纵模增益差的竞争机制问题和双微环-非对称MZI波长宽调谐机理问题，对硅基可调谐激光器展宽研究，实现频率线宽≤1kHz，波长调谐范围≥50nm，边模抑制比≥50dB。本项目的研究将为高速、高容量、低成本、低功耗的片上集成技术提供有竞争力的激光光源。