离子注入法在半导体上直接制备和掺杂石墨烯的研究

Direct synthesis and doping of graphene on semiconductor is very important research direction. There are many methods to synthesize and dope graphene, however, most of these methods still exist, such as transfer, grain boundary, doping and other problems to be solved, which hinder the development of graphene applications. Aims to overcome the difficulty of direct synthesis and controllable doping of graphene, the ion implantation technique is used to change the atomic ratio of the semiconductor surface. During the high-temperature annealing process, carbon atoms are self-assembled to form graphene on the surface of the semiconductor, which can avoid the defects introduced in the transfer process. In addition, the pre-implantation heteroatoms can also combine with the segregated carbon atoms, and finally forming heteroatoms doped graphene. This project will explore the suitable conditions by controlling the parameters of ion implantation type, implantation parameters and annealing to obtain large-area, high-quality and controllable doped graphene on the semiconductor surface. Finally, the project promotes the development of ion beam method in the field of graphene and broaden the prospect of industrialized graphene by using ion implantation technology. It provides some useful exploration for the preparation of new functional materials based on graphene.

在半导体表面直接制备和掺杂石墨烯是一个非常重要的研究方向，目前尽管石墨烯制备和掺杂方法层出不穷，但这些方法仍然存在很多诸如转移、晶界、能带调控等问题亟待解决。本项目针对在半导体表面制备和掺杂石墨烯的难题，利用离子注入技术改变半导体表面原子配比，在高温退火过程中碳原子发生自组装过程，可直接在半导体表面形成石墨烯，这可以避免石墨烯转移过程引入的缺陷。此外，预注入的异质原子析出参与碳原子自组装过程，可以直接形成异质原子替位掺杂的石墨烯。本项目将通过控制离子注入种类、注入参数和退火参数探索直接在半导体表面形成大面积、高质量石墨烯的条件；研究石墨烯在半导体上的生长机理；研究通过利用预注入异质离子直接制备掺杂石墨烯。总之，通过研究离子束在石墨烯领域的应用，为石墨烯材料未来在微电子器件应用领域提供一些有益的探索。

石墨烯具备优异的物理化学性能，在诸多领域都有广泛的应用前景。离子注入技术作为一种精确可控的离子引入和材料改性手段，有潜力推动石墨烯走向实际应用，我们重点关注了如下问题：石墨烯在不同衬底上的无转移制备、掺杂石墨烯的一步法无损制备、石墨烯的带隙调控、催化剂的晶圆级可控加载。利用离子注入技术，我们先后实现了石墨烯在锗、碳化硅等半导体，石英、蓝宝石、钠钙玻璃等绝缘衬底上的无转移制备，发展了一整套在特殊衬底上利用离子注入技术辅助石墨烯制备的方法。此外，我们利用离子注入技术同步引入掺杂源和碳源，实现了掺杂石墨烯的一步法制备，避免了传统掺杂方法带来的缺陷问题。在上述基础上，我们利用实验与模拟相结合的方式，对离子注入辅助石墨烯制备和掺杂的过程进行了机理研究。总之，本项目从石墨烯的制备和掺杂两个路线入手，基于离子注入技术，发展了多种衬底上石墨烯及掺杂石墨烯无转移制备的通用方法，取得了较好的实验成果，对石墨烯的实际应用有非常重要的科学意义。