硅衬底微波集成电路舆线与无源元件的电特性研究

Microwave transmission lines on Si substrate with polymide dielectric layer were simulated using 3D time domain finite difference (3D-FDTD) method. The frequency-dependent distributed characteristic parameters were extracted. The influence of thickness of polymide on the electrical performance of transmission lines was analyzed. The electrical performance of the transmission lines was also obtained by experimental test, which is consistent with the simulation.result. A physical model of spiral nductor on silicon(SIOS)for RF integrated circuit is analyzed in detail. The optimized Q is realized through numerical optimization in the condition of unchangeable inductance value AND area. The result shows that Q is much higher after optimization. An experimental model for spiral inductor is obtained. An analytic formula for the quality factor is obtained with DDM. A new VCO is designed based on 0.5-um CMOS technology, which yielded phase noise as low as –100dBc/Hz at 500kHz offset. A common voltage-controlled MOS varatctor is changed to an inversion voltage-controlled MOS varactor. The simulation results.by applying the two MOS varactor to this circuit show that larger tune range, better phase noise and monotonic tuning curve can be obtained with the inversion MOS varactor. A fast algorithm of partial matrix elimination (PME) combined with a new strategy of variable time step (VTS) is developed for analysis of nonlinear circuits containing interconnects.The electrical performance of superconductor transmission lines is also analyzed.

本项目研究用二维与三维与三维时域有限养分法对硅衬底微波舆线与无源元件进行全波电磁场分析，提取它们的电路模型参数，并用实验测量加以验证。将对这些参数随传输线与无源元件衬底的材料构成与几何结构变化的规律进行总结，对一些简单的硅衬底微波电路进行信号模拟分析，为这些传输线与无源元件在前景诱人的硅衬底微波集成电路中的应用提供指导。