高功率准连续半导体激光器列阵腔面光学灾变损伤研究与提高

Quasi-continuous laser diode array and its pumped solid state laser, fiber laser are widely used in the field of advanced manufacturing, medical cosmetology, aerospace, military and national defense etc. The catastrophic optical mirror damage (COMD) has become the main bottleneck of peak power and reliability for quasi-continuous laser diode array. The key to improve the COMD level is to thoroughly study the facet surface physics, including the mechanism of formation of cavity surface states and interface states, heat generation by electrons and holes non-radiative recombination, the passivation of unsaturated dangling bonds, and the coating technology breakthrough. This project will study the surface state physics, the mechanism of laser adsorption on the surface state, interactions between surface defects and water molecules, carbon oxygen compounds, and impurity particles. We will explore the new facet surface etching technology removing water molecules and impurity particle, cavity surface passivation and quality film coating. The three-in-one surface treatment technologies, which effectively avoid the pollution, will enable the realization of 808nm quasi-continuous laser diode array COMD peak power of 800W, to meet the growing demand for laser pumping.

准连续半导体激光器及其泵浦的固体激光器、光纤激光器在先进制造、医疗美容、航空航天、军事国防等领域的具有广阔的应用前景。腔面光学灾变损伤（COMD）已经成为制约准连续半导体激光器峰值功率和可靠性进一步提高的重要瓶颈。COMD水平提高关键在于对腔面表面物理的研究，腔面的表面态和界面态的形成及其电子空穴的非辐射复合产热的机理研究，腔面不饱和悬挂键的钝化与镀膜关键技术突破。本项目主要开展半导体激光器腔面表面态物理研究，对腔面的悬挂键、自身缺陷等表面态对水分子、碳氧化合物、杂质颗粒的吸附机理进行深入研究，明确不同能级深度的表面态对激射波长的光吸收机理，探索新型腔面刻蚀技术，去除腔面吸附的水分子和杂质吸附，开发腔面刻蚀清洗、腔面钝化和腔面镀膜三位一体的腔面处理技术，避免二次污染，最终实现808nm准连续半导体激光器阵列COMD峰值功率大于800W，满足日益增长的泵浦需求。

808 nm准连续半导体激光器列阵是固体激光器理想的泵浦源，同时可以作为直接半导体激光光源在先进制造、医疗美容、航空航天等领域有着广泛的应用。而腔面光学灾变损伤（COMD）是制约808 nm准连续半导体激光器峰值功率和可靠性进一步提高的重要瓶颈。本项目通过对半导体激光器腔面表面态物理进行研究，特别是腔面的悬挂键、自身缺陷等表面态对水分子、碳氧化合物、杂质颗粒的吸附机理进行了深入分析，明确不同能级深度的表面态对激射波长的光吸收机理，开发了新型腔面刻蚀技术，去除腔面吸附的水分子和杂质吸附，开发出腔面刻蚀清洗、腔面钝化和腔面镀膜三位一体的腔面处理技术，避免二次污染，研制出808 nm准连续半导体激光器阵列，实现准连续功率输出大于600 W（占空比8%），列阵器件的COMD峰值功率高达1000 W。该研究带动了我国高功率半导体激光技术和固体激光技术的快速发展，具有重要的应用前景。