适于阻变存储器无源交叉阵列的双向选通管及其物理机制研究

Three-dimensional (3D) storage technology is considered to be the most effective method to satisfy the future requirement of ultra-large capacity data storage. In recent years, resistive random access memory (RRAM) device has received extensive attention and considered as one of the most promising candidates for future ultra-high density storage application due to its simple structure, good scalability, excellent compatibility with CMOS technology, and ease to 3D integration. However, the lack of suitable selector is one of the main obstacles to realize 3D integration of RRAM. For the key issue, this project will focus on the investigation of bidirectional selector with nonlinear I-V characteristics. To obtain satisfactory selector, which has large current density, high nonlinear factor and high reliability, for RRAM passive crossbar array application, the bidirectional selector with nonlinear resistor behavior will be systemically investigated and optimized based on the materials, device structure, fabrication process, and physical mechanism. The successful implementation of this project will provide important guidelines for the realization of the high-density 3D integration of bipolar RRAM, which is expected to get a lot of original research achievements with independent intellectual property rights in RRAM field.

三维存储技术被认为是未来实现超大容量数据存储的关键途径。阻变存储器(RRAM)由于其结构简单、性能优越、与CMOS工艺兼容、易于三维集成而引起了广泛关注。然而，缺乏合适的选通管是RRAM实现三维集成的主要障碍之一。本项目针对这个关键问题，结合目前该领域的研究现状和已有的研究基础，选取具有双向导通特性的非线性电阻件为研究对象，从器件的材料、结构、制备、物理机制等方面出发，阐明双向选通管器件的内在物理机制，研制具有高电流密度、高非线性系数、高可靠性、可适于阻变存储器无源交叉阵列的双向选通管器件。为实现超高密度RRAM无源交叉阵列的三维集成奠定基础，从而推动我国存储器技术的发展。

三维存储技术被认为是未来实现超大容量数据存储的关键途径。阻变存储器由于其结构简单、性能优越、与CMOS工艺兼容、易于三维集成而引起了广泛关注。然而，缺乏合适的选通管是RRAM实现三维集成的主要障碍之一。本项目选取具有双向导通特性的非线性电阻件为研究主要对象，制备出具有稳定性好、高可靠性、可适于阻变存储器无源交叉阵列的双向选通管器件。基于与CMOS工艺兼容的氧化物材料，制备出了一种低成本、性能稳定的可适用阻变存储器无源交叉阵列的双向选通管器件，通过将制备得到的双向选通管与双极性阻变存储单元串联构成1S1R结构，该1S1R结构可实现双极性的电阻转变特性，并且具有很好的稳定性。此外，提出了由瞬态抑制二极管（Transient Voltage Suppressor TVS）作为双向选通管的新型结构。模拟结果表明，与由单独阻变存储单元构成的交叉阵列相比，采用瞬态抑制二极管作为双向选通管，交叉阵列的存储密度能够达到1兆。本项目的实施为阻变存储器实现超高密度无源交叉阵列的三维集成积累了实验数据并奠定了基础。