应变调控VO2相变特性与光（电）子器件应用基础

Besides by heating, pulsed laser, and electrical field, metal-insulator transition in VO2 can be triggered by stress in the lattice; thus, its electrical and optical properties will be changed significantly. We propose to study the following areas. 1) Growth and characterization of the strained VO2 on piezoelectric and other different substrates. 2) Carrier transport in strained epitaxial or polycrystalline VO2 resulted from the lattice mismatch and thermal stress. 3) Piezo-effect in the substrate stresses the VO2 to trigger the phase transition and to change in transmission of infrared and terahertz spectral. The purposes are as follows: 1) on the effects of interface and quantum size, to achieve high performance of thermal resistor for infrared and terahertz wave detector. 2) As the applications for functional photonics of infrared and terahertz wave by the strain triggering the phase transition, it is expect to avoid the issues of (a) slow response, (b) filament, and (c) sensitive area limited by the size and shape of laser spot when the phase transition is triggered by heating, electrical field, and laser; respectively.

除改变温度、电场、脉冲激光外场驱动VO2金属-绝缘相变外，晶格应力的改变也可以通过相变大幅调控其电学、光学特性实现光（电）子器件应用。项目主要研究内容：1）应变VO2在压电等多种衬底上的沉积与表征。2）由晶格失配和热应力作用下的外延或多晶VO2的载流子输运与光学特性。研究界面、量子尺度效应对VO2室温电阻温度系数及低频噪声系数、红外及太赫兹波传输特性的影响（光电子器件应用）。3）通过衬底的压电效应间接改变VO2的应变大小来调控金属-绝缘相变、红外及太赫兹波的传输特性（功能光子器件应用）。其意义：1）在界面的作用下，利用量子尺度（膜厚）效应获得实现非致冷红外及太赫兹波探测的高性能热敏电阻材料；2）利用应变驱动VO2的金属-绝缘相变，期望在红外及太赫兹功能光子器件的应用中能同时避免（a）温度调控导致的响应速度慢、（b）电荷注入引起的灯丝效应、（c）有效工作区域受激光光斑尺寸与形状限制等问题。

除改变温度、电场、脉冲激光外场驱动VO2金属-绝缘相变外，晶格应力的改变也可以通过相变大幅调控其电学、光学特性实现光（电）子器件应用。项目主要研究内容：1）应变VO2在压电等多种衬底上的沉积与表征。2）由晶格失配和热应力作用下的外延或多晶VO2的载流子输运与光学特性。研究界面、量子尺度效应对VO2室温电阻温度系数及低频噪声系数、红外及太赫兹波传输特性的影响（光电子器件应用）。3）通过衬底的压电效应间接改变VO2的应变大小来调控金属-绝缘相变、红外及太赫兹波的传输特性（功能光子器件应用）。其意义：1）在界面的作用下，利用量子尺度（膜厚）效应获得实现非致冷红外及太赫兹波探测的高性能热敏电阻材料；2）利用应变驱动VO2的金属-绝缘相变，期望在红外及太赫兹功能光子器件的应用中能同时避免（a）温度调控导致的响应速度慢、（b）电荷注入引起的灯丝效应、（c）有效工作区域受激光光斑尺寸与形状限制等问题