黑磷复合BiFeO3基薄膜异质结构的制备及其可控光催化性能的研究

BiFeO3(BFO) ferroelectric thin film is a new kind of semiconductor with narrow band, whose photocatalytic activity is closely related to its band gap. As an alternative to traditional Si material, black phosphorus possesses promising electron mobility and leakage current modulation rate. Controllable photocatalytic activity can be obtained, when BFO-based thin film is composited with black phosphrous by different thicknesses and means to form heterostructures. In this project, different processes are adopted to prepare photocatalytic BFO-based thin films composited with black phosphrous. The main point is to obtain controllable photocatalytic activity by adjusting thickness, concentration and way of composition. Meanwhile, through modern analysing and testing ways, as well as analog computation, the mechanisms for photocatalytic activity are investigated systematically. This will provide scientific evidence for improving photocatalytic activity and wide use prospect for BFO-based thin film.

BiFeO3(BFO)铁电薄膜作为新型窄能带半导体，其光催化活性与自身禁带宽度密切相关。作为传统硅替代性材料，黑磷具有良好的电子迁移率、漏电流调制率。BFO基薄膜与一定厚度的黑磷以不同形式复合形成异质结构有望获得可控光催化活性。本项目拟采用不同工艺方法制备黑磷/BFO基复合光催化薄膜，重点通过调整黑磷厚度、浓度及复合方式，实现光催化性能可控；同时借助于现代分析测试手段以及模拟计算方法，对于光催化性能优化机理进行整体性研究，为多铁BFO基薄膜光催化性能的改善及未来广泛应用提供科学依据。

黑磷量子点（BPQDs）继承了黑磷片层的优点，而且受到量子约束和边缘效应，它们表现出独特的光物理和电化学性质。BPQDs中载流子可以通过诱捕介导复合，大的比表面积可以显著提高光催化反应的界面反应速率，从而提高光催化反应的表面振幅。铋基半导体具有较多的活性位点和较高的稳定性，在光催化领域受到越来越多的关注，铋基半导体与黑磷量子点的复合成为提高光催化降解有机污染物的重要途径。本项目拟采用不同工艺方法制备BPQDs/BiOBr复合光催化薄膜、BPQDs/g-C3N4/BiFeO3等复合光催化剂，重点通过调整黑磷厚度、浓度及复合方式，实现光催化性能可控；同时借助于现代分析测试手段，对于光催化机理进行了整体性探究，为制备铋基半导体和黑磷的复合光催化剂提供了科学依据。