异质结构的SiC基一维半导体纳米材料的可控合成与光电性能研究

Recently, the fundamental and applied research on silicon carbon (SiC) nanoheterostructures has attracted extensively attention due to the added benefit of multifunctionality or new properties arising from combining different materials. According to the development of the nanoscience and nanotechnology, it is planned to synthesize novel SiC-based one-dimensional semiconductor nanomaterials with heterostructures by a facile low-temperature solvothermal method，and investigate the controllable synthesis and photoelectric properties of SiC nanoheterostructures, and design the nanoheterojunction devices. It is stressed to develop the promising photoelectric functional devices in this project. The growth technique and mechanism for the controlled synthesis of SiC-based one-dimensional semiconductor nanomaterials with heterostructures including SiC/MWCNT、SiC/C、SiC/ZnO、SiC/CdS、SiC/Au will be extensively explored, which is expected to accurately control the chemical composition, structure, morphology and size of SiC-based one-dimensional semiconductor nanomaterials with heterostructures. The microstructure, optical and electrical properties of SiC-based one-dimensional semiconductor nanomaterials with heterostructures will be systemically investigated, which is expected to find the relation between the microstructure and the photoelectric properties of SiC-based one-dimensional semiconductor nanomaterials with heterostructures. The electronic properties of SiC-based one-dimensional semiconductor nanomaterials with heterostructures will be investigated by using the first-principles method, which is expected to realize the microstructure design consistent with the photoelectric functional design of SiC nanoheterostructures. It is our aim to develop the promising SiC-based nanoheterojunction devices and broaden the application of nanodevices fabrication technology.

SiC异质纳米结构在继承SiC纳米材料众多优异性能的基础上，又集合了其它材料的优异性质，具有非常广阔的应用前景，其相关基础和应用研究已成为当前国际纳米科技最新的研究热点之一。本申请项目根据国际纳米科技的发展趋势，围绕研制具有重要应用前景的光电功能器件，以溶剂热法为合成手段，开展SiC异质纳米结构的可控生长、光电特性以及纳米器件单元构建研究。重点探索SiC/MWCNT、SiC/C、SiC/ZnO、SiC/CdS、SiC/Au一系列异质结构的SiC基一维半导体纳米材料的可控生长工艺和机理，实现其化学组分、结构、尺寸、形貌的精确调控；并系统研究这些纳米材料的微观结构、光学和电学特性，确定微观结构对光电性能的影响；同时采用第一性原理对这些纳米材料进行几何结构优化和电子结构的计算，实现光电功能设计与结构设计之间统一对应，并研制具有应用前景的SiC异质纳米结构器件单元，拓展纳米器件制备技术的应用空间。

SiC异质纳米结构在继承SiC纳米材料众多优异性能的基础上，又集合了其它材料的优异性质，具有广阔的应用前景。本项目以溶剂热法为主要合成手段，系统研究了反应物、溶剂、催化剂、反应温度和时间等条件对合成产物结构的影响，通过XRD、SEM、TEM、拉曼等一系列材料表征方法结合性能测试手段分析了合成产物的化学组分和微观结构与光、电性能之间的对应关系，发现了合成产物的微结构变化对材料导电性、电化学性能以及光电性能产生影响的部分规律，并进行了相应的理论计算和模拟。本项目所取得的研究成果可应用于纳米材料合成的新方法、抗氧化防护层、偏光分束、白光LED的增强、LED白光灯光谱质量检测、肖特基太阳能电池、光电检测、场发射冷阴极和无损检测等方面。