高速双段式DFB集成激光芯片研究

High speed 1310nm DFB lasers is a critical photonic device technology in medium reach optical data communication networks up to 10km, in order to support the ever expanding bandwidth demands of internet user applications, such as online video and gaming. The photonic industry is migrating from 10G to 40G and 100G Ethernet technology over the next decade. To support the next generation optical datacom networks expected to operate at 400G and 1.6T, a key technological challenge is to expand the single channel transmission data rate way beyond the current 25Gb/s, which is considered the maximum data rate of directly modulated 1310nm DFB lasers, limited by the electron-photon relaxation oscillation process. The new device technology also must meet high volume and low cost requirements of the optical datacom market. Based on the photon-photon resonance effect, the optical injection approach has been shown in external cavity optical systems to significantly increase the f3dB modulation bandwidth of the slave laser. The external system however requires expensive and bulky optical alignment setups. In this project we propose a novel integrated laser chip design, with a two section DFB laser in a master-slave optical injection configuration. Key parameters such as the optical injection power ratio, frequency detuning can be optimized in the monolithic chip design. We believe our monolithic design has the potential of high speed operation up to 50-100Gb/s, and perfectly suited to the volume semiconductor manufacturing model. We plan to establish a device physics model for the two mode optical injection effect based on systematic experimental work and in depth device modelling. Key scientific problems also include understanding two mode coupling effects inside a laser cavity, and developing the fabrication process for optimizing the high speed device performance. We believe our proposed work has the potential of delivering a crucial technology solution for the next generation high capacity optical datacom networks.

高速1310nm DFB激光器是10公里内数据通讯网络的关键光电器件，用于满足诸如在线视频及游戏等日益扩张的互连网络用户带宽需求。未来数年以太网络的传输速度将实现由10G向40G-100G过渡。下一代以太网络的传输速率预期为400G与后续的1.6T，其最主要的芯片技术挑战为超越现有1310nm DFB芯片技术中，光电弛豫震荡效果所限的25Gb/s直调速度瓶颈，同时满足大批量低成本的市场产品要求。本项目中提出两段式DFB集成芯片的设计方案，利用腔内光注入锁定，以及光子间共振效应显著增加调制带宽。这种带宽扩展效果已在学术界进行的外腔注入锁定实验中得到验证，但主要问题为其复杂昂贵的实验平台无法实现小型化。本项目计划采用器件制备，工艺与模拟结合的方式系统分析腔内注入锁定的物理机制，实现50-100Gb/s的调制速率的两段式集成芯片，为下一代数据网络提供关键产业化技术解决方案。

高速直接调制 DFB 激光器是10 公里内数据通讯网络的关键光电器件，用于满足诸如在线视频及游戏等日益扩张的互连网络用户带宽需求。目前直接调制DFB芯片技术挑战为超越现有DFB 芯片技术中，光电弛豫震荡效果所限的25Gb/s直调速度瓶颈，同时满足大批量低成本的市场产品要求。本项目研制两段式DFB 集成芯片的设计方案，利用腔内光注入锁定，以及光子间共振效应显著增加调制带宽。最终实现了双DFB芯片、DFB+SOA+DFB及同一有源区DR直调激光器芯片的带宽扩展。