利用慢正电子束研究透明导电氧化物薄膜中的缺陷及其对电性能的影响

Transparent conducting oxide (TCO) thin films, with high optical transmission and electrical conduction, are promising for the applications in the next generation of thin film optoelectronics, such as solar cells，flat panel displays (FPD), organic light emission diodes (OLED), thin film transistors (TFT) and gas sensors etc. Recently, the electrical properties and defects/nanostructures of TCO thin films attracted great interests from researchers working on material science and transparent thin film electronics. In this proposal, various methods will be applied to fabricate different TCO thin films with controlled defects and nanostructures. Positron annihilation techniques based on slow positron beams as novel tools for the characterization of thin films as well as various conventional methods will be utilized to study the microstructures of TCO films and their electrical properties. Impacts of the defects and nanostructures, such as grain size/grain boundaries, vacancies/vacancy clusters, dopant, porosity and pore morphology etc., on the electrical properties of TCO films will be investigated. From the research on the proposed topics, it is expected to find the important roles played on the carrier transportation in TCO films. It will help us optimize the methods for the fabrication of TCO thin films with good photoelectrical properties, and it will offer theoretical and experimental basis for fabrication of TCO films with advanced electrical properties and design of thin film electronics.

由于具有较优越光电特性，透明导电氧化物(TCO)薄膜被广泛用于研发各种光电器件，在下一代薄膜器件如薄膜太阳能电池、平板显示器(FPD)、薄膜有机发光二极管(OLED)、薄膜晶体管(TFT)和薄膜气敏器件等方面有广泛的应用前景。调控并研究其缺陷微结构、导电性能是材料科学和透明导电薄膜器件领域的研究热点。本课题将利用不同制备手段和后处理方法制备TCO薄膜并调控其缺陷微结构，利用薄膜缺陷的独特表征方法——基于慢正电子束的正电子湮没技术及其他常规实验技术开展缺陷微结构及薄膜导电性能研究。从微观上研究缺陷结构(晶粒/晶界，空位/空位团/杂质, 孔隙率、纳米孔形态等)与薄膜导电特性之间的联系。通过本研究，期望确立影响载流子输运特性的微观关键因素，优化导电薄膜材料的制备工艺，将为优越性能TCO薄膜的制备和薄膜器件设计提供理论依据和实验基础。

由于具有较优越光电特性，透明导电氧化物(TCO)薄膜被广泛用于研发各种光电器件，在下一代薄膜器件如薄膜太阳能电池、平板显示器(FPD)、薄膜有机发光二极管(OLED)、薄膜晶体管(TFT)和薄膜气敏器件等方面有广泛的应用前景。调控并研究其缺陷微结构、导电性能是材料科学和透明导电薄膜器件领域的研究热点。本课题利用不同制备手段和后处理方法制备TCO薄膜并调控其缺陷微结构，利用薄膜缺陷的独特表征方法——基于慢正电子束的正电子湮没技术及其他常规实验技术开展缺陷微结构及薄膜导电性能研究。从微观上研究缺陷结构(晶粒/晶界，空位/空位团/杂质, 孔隙率、纳米孔形态等)与薄膜导电特性之间的联系。本研究确立了影响载流子输运特性的微观关键因素，为优越性能TCO薄膜的制备和薄膜器件设计提供了理论依据和实验基础。