新型双栅纳米线双电荷层晶体管研究

Double-gate nanowire transistors have attracted extensive interest for nanoscale biochemical sensor applications because of threshold voltage controllable, large on current and ultra-high-sensitive. The contents of this project are: Firstly, the solid electrolyte (nanoporous SiO2 and chitosan) can be fabricated by PECVD or spin-coating technology as gate dielectrics. Secondly, a mechanical probe was transferred nanowire and the ITO electrodes were deposited by radio frequency magnetron sputtering through the transmission electron microscopy nickel grid for fabricating novel double-gate nanowire transistors at room temperature, and the operational voltages of the double-gate device is down to 1V. Thridly, the electrical characterizations of solid electrolyte and novel double-gate nanowire transistors will be performed by an impedance analyzer and semiconductor parameter analyzer, while the working mechanism of modulation enhancement, depletion operation mode of the double-gate device was illustrated. The last, the high capacitance-frequency characteristics of solid electrolyte was optimized, to increase the working frequency of the double-gate devices. The above researches open up a new way for low power consumption, low cost and portable nanosensors research.

双栅纳米线晶体管因具有可控的阈值电压调节、高输出电流、高灵敏度等优点，在纳米级生化传感器应用领域具有巨大应用前景。本项目拟：第一，采用PECVD、旋涂技术制备微孔状SiO2、壳聚糖等固态电解液作为绝缘层；第二，在室温下，采用探针转移纳米线，结合透射电子显微镜镍网掩模沉积ITO电极，研制工作电压低于1V、全透明新型双栅纳米线晶体管；第三，表征固态电解液双电荷层特性及新型双栅器件的电学特性，并阐明双栅结构调控器件的工作机理；第四，优化固态电解液的高频特性，提高器件的工作频率，为低功耗、低成本、便携式纳米传感器研究开辟新途径。

双栅纳米线晶体管具有可控的阈值电压调节、高输出电流、高灵敏度等优点，在纳米级生化传感器应用领域具有巨大应用前景。本项目主要研究制备高性能新型双栅结构器件，为便携式纳米级电子器件做铺垫。在项目经费支持下，完成了预定研究目标，具体科研内容如下：1、系统研究了SnO2纳米线新型双栅结构双电荷层晶体管器件的性能，分析低工作电压及阈值电压的调控机理，发现不管是传统的底栅还是侧栅结构的晶体管器件的阈值电压都能被侧栅电极有效调控。相关研究内容文章发表在Appl. Phys. Lett及Jpn. J. Appl. Phys上，完成了项目中与新型双栅结构相关的研究目标；2、在柔性纸上采用TEM掩膜法成功制备了低压纳米线晶体管，相关内容文章发表在 Electron Devices Society上；3、采用水溶液法制备了H3PO4-Chitosan薄膜，并在此基础上制备了高性能无结薄膜场效应器件。共计发表标注资助的研究论文9篇，研究结果为便携式纳米级电子器件的应用研究开辟新途径。