应用于RF MEMS开关的新型减振合金薄膜材料中孪晶行为的研究

In the field of Radio Frequency (RF) Micro-ElectroMechanical Systems (MEMS), RF MEMS switch is one of the most important areas. Compared with the conventional semiconductor switches, low insertion loss and high isolation are the merits of RF MEMS switch. However, RF MEMS switches are easily failure because of the mechanical movement caused by fracture of the movable structure. If low stiffness design is taken to improve its life, the switching speed of the device will be affected. It will also bring the adhesion and failure to result in reliability reduction. The mechanical reliability of RF MEMS switches depends on fatigue life of the material which consists of the movable structure. This project will use the damping alloy to reduce the harmful effects of the mechanical movement to the movable structures of RF MEMS switches. The rules of twin crystals behaviors of the Manganese Cuprum alloy thin film will be studied, and its damping characteristic to extend the switch movable structure life will be studied too, like large attenuation coefficient, flat resonance curve, long fatigue life. The application of the creative film in the RF MEMS device will be also explored..

射频（Radio Frequency，RF）微机电系统（Micro-ElectroMechanical Systems）RF MEMS领域中，RF MEMS开关是最重要的研究方向之一。相比于传统的半导体开关，RF MEMS开关具有低插入损耗、高隔离度等优点。不过由于机械运动的存在，RF MEMS开关容易因可动结构的断裂而失效，若为提高寿命而采取低刚度结构的设计，又容易造成粘附而失效，降低可靠性。由于RF MEMS开关的机械可靠性主要取决于可动结构的材料疲劳寿命，本项目拟采用减振合金材料来降低机械运动对RF MEMS开关器件中可动结构的不良影响。本项目研究新型锰铜系减振合金薄膜材料中的孪晶行为规律及与其衰减特性的关系，利用其衰减系数大、共振曲线扁平、疲劳寿命长等材料特性来延长开关可动结构的寿命，并探索其在RF MEMS开关器件中的应用。

射频（Radio Frequency，RF）微机电系统（Micro-ElectroMechanical Systems）RF MEMS领域中，RF MEMS开关是最重要的研究方向之一。相比于传统的半导体开关，RF MEMS开关具有低插入损耗、高隔离度等优点。不过由于机械运动的存在，RF MEMS开关容易因可动结构的断裂而失效，若为提高寿命而采取低刚度结构的设计，又容易造成粘附而失效，降低可靠性。由于RF MEMS开关的机械可靠性主要取决于可动结构的材料疲劳寿命，本项目拟采用减振合金材料来降低机械运动对RF MEMS开关器件中可动结构的不良影响。本项目研究新型锰铜系减振合金薄膜材料中的孪晶行为规律及与其衰减特性的关系，利用其衰减系数大、共振曲线扁平、疲劳寿命长等材料特性来延长开关可动结构的寿命，并探索其在RF MEMS开关器件中的应用。