阻变存储器中忆阻、忆容、忆感共存分量的诱导控制技术研究

Memristor is a newly discovered passive circuit element, which has become one of the key interdisciplinary directions of electronic science, nano science and material science, benefiting from its capability of memorizing the history of applied stimulus. To date, with the concept introduction and fabrication of memcapacitive elements and meminductive elements, memristors, memcapacitors, and meminductors have established a complete system of memory circuit elements. This project mainly focuses on research of characteristics design, fabrication, measurement and application of RRAM devices that possess coexistence of memristive, memcapacitive and meminductive behaviors. Initially, employing characterization tests, the process of conductive filaments formation and rupture, as well as the factors that influent the process are investigated within typical RRAM devices. Then based on these results, several methods are proposed to control the density and path of filaments formation within active layer, to realize the aim of controlling memristive, memcapacitive and meminductive components. Finally, the relations between connection of memory elements and device parameters as well as stimulus parameters are studied, and a characteristics description SPICE model is established. The contribution of this project can support the application and industrialization of novel memory circuit elements.

忆阻器是近年来发现的新型无源电路元件，因其具有记忆激励历史的特性，目前已成为国际电子学、纳米科学、材料学等领域跨学科研究的重点。近年来随着忆容器、忆感器概念的提出与制备，忆阻器、忆容器与忆感器已构成完备的记忆元件体系。本项目围绕具有忆阻、忆容和忆感分量共存的阻变存储器件的特性设计、制备、测试与建模展开研究。首先，通过表征测试手段对典型阻变器件中导电细丝的生成过程以及影响因素进行观测与研究。随后，在此基础上通过对导电细丝的密度和路径进行诱导控制，实现对器件忆阻、忆容和忆感分量的控制。最后，测试研究器件中各记忆分量连接关系与器件参数和工作参数的关系，并建立器件特性描述SPICE模型。相关研究成果将为新型记忆电路元件的应用及产业化提供器件设计、特性测试与模型支撑作用。

忆阻器、忆容器和忆感器构成了完整的记忆元件体系。其中忆阻器的研究相对成熟，而忆容器和忆感器的研究相对较少。本项目围绕具有忆阻、忆容和忆感分量共存的记忆电抗器件的特性设计、制备、测试与建模展开研究。研究中首先设计制备了Ag/TiO2/Pt、Ag/HfO2/Pt两种记忆电抗器件，通过表征分析了器件内部导电细丝的生长过程，初步厘清了器件导电机制。其后通过在器件中插入石墨烯阻挡层并在其上打孔的方式，限域调控了器件内导电细丝的生长，优化了器件忆阻、忆容和忆感分量的性能。然后，在器件电特性测试的基础上，建立了能够反映器件特性的SPICE模型。此外，还探索验证了记忆电抗器件作为电子突触器件的性能，并针对记忆电抗器件应用需求设计制备了选通器件，开发了高速响应的限流电路。相关研究成果将为新型记忆电路元件的应用及产业化提供器件设计、制备与模型支撑作用。