微处理器电-磁-热多物理场效应机理与健壮性研究

The electron-magneto-thermal multiphysics field effect determines the electromagnetic robust-ness of the microprocessors over lifecycle and restricts the equipment functional safety and com-prehensive performance under complex environment. This project carries out the research on the mechanism, robustness characterization, behavior modeling and prediction evaluation of electro-magnetic and thermal stress composite environmental effect for microprocessor.Combining mul-ti-disciplines such as integrated circuits electromagnetic compatibility, functional safety and relia-bility theory, the project analyses the composite electromagnetic-thermal environment effect mechanism and reveals the electric-magnetic-thermal physical fields cross coupling rule and the dynamic behavior evolution mechanism of robustness for the microprocessor.This project studies the behavior characterization and modeling method of the electromagnetic robustness for microprocessor under complex environment and establishes the prediction model and simulation environment of electromagnetic function behavior for microprocessor level.In this project, the experimental method of electromagnetic compatibility and thermal stress aging for typical microprocessors was studied. The experimental platform in the chip level for electro-magnetic-thermal composite environment effect was built. And the electromagnetic thermal robustness threshold of the microprocessor was tested.Comprehensive simulation prediction, test analysis, technical standard and evaluation criteria are used to evaluate the evolution and safety margin of the electro-magnetic-thermal robustness for microprocessor, and the behavioral risk control strategy was put forward. The project is dedicated to solving the robustness evaluation science problem of the electron-magnetic-thermal multi-physical effect for core microprocessors, providing theoretical foundation and technical support for the application under complex environment and innovative engineering of high-end equipment for micro-processor.

电-磁-热多物理场效应决定着微处理器全寿命周期电磁健壮性能，严重制约复杂环境下高技术装备的功能安全与综合效能。本项目开展微处理器电磁与热应力复合环境效应机理、健壮性表征、行为建模、预测评估研究。融合集成电路电磁兼容、功能安全和可靠性理论，分析微处理器电磁与热复合环境效应机理，揭示电-磁-热多物理场交叉耦合规律及行为动态演化的健壮性机制；研究微处理器复杂环境电磁健壮性行为表征与建模方法，建立微处理器级电磁功能行为预测模型与仿真环境；研究典型微处理器电磁兼容协同热应力老化实验方法，构建芯片级电-磁-热复合环境效应试验平台，测试微处理器电磁热健壮性阈值；综合仿真预测、测试分析、技术标准及评价准则，评估微处理器电磁热健壮性演化及安全裕度，提出行为功能风险控制策略。项目致力于解决核心微处理器电-磁-热多物理场效应机理与健壮性评估科学问题，为微处理器复杂环境应用和高端装备创新工程提供理论与技术支持。

集成电路及微处理器是目前国家发展战略和卡脖子问题，在国家基础设施和电磁空间安全体系建设中具有重要作用。微处理器电-磁-热多物理场效应关乎系统全寿命周期电磁健壮性能，决定复杂环境系统装备的功能安全与综合效能。项目旨在开展微处理器电磁与热应力复合环境效应机理、健壮性特性、行为建模、预测评估等科学研究，解决微处理器及其应用的电磁健壮性科学技术问题。项目融合集成电路电磁兼容、功能安全和可靠性理论，分析微处理器芯片电磁与热复合环境效应机理，揭示了集成电路电-磁-热多物理场交叉耦合规律及行为演化机制；研究微处理器电磁健壮性行为建模方法，建立了微处理器级电磁功能行为预测与仿真环境，给出典型芯片电磁热应力效应分析模型及功能单元电-磁-热抗扰度数理模型，实现了典型微处理器电磁热健壮性能分析与评价；探索微处理器电磁兼容协同热应力老化实验分析方法，构建了芯片级电-磁-热复合环境效应试验平台，测试了典型控制器、FPGA等芯片电磁热健壮性阈值，完成典型微处理器电-磁-热复合效应安全分析；开展了微处理器嵌入密码模块、软件无线电等系统的电磁环境效应试验与功能安全预测分析，提出了典型微处理器及其系统电磁行为功能风险控制策略。研究微处理器嵌入无人机系统的电磁环境效应及安全特征，设计典型无人机控制模块电磁干扰耦合注入实验分析平台，创建了无人机定位系统辐照干扰等效试验分析系统，实现了无人机系统复杂环境定位功能、故障类型特征和行为风险分析评估。项目研究成果为微处理器复杂环境和高端装备应用提供理论与技术支持，对微处理器电磁健壮性科学评估与复杂环境电磁安全分析具有重要科学价值。项目研究发表学术论文25篇，其中SCI论文6篇，授权国家发明专利3项，获自然科学省部级一等奖等奖励多项，培养硕士、博士研究生10余名，有效支持了大学学科建设与人才培养。