新型二维纳米材料对聚合物基纳米电介质陷阱能级分布与界面结构调控及其对电气性能影响

This project is mainly based on the usage of new-type 2D nanomaterials/polymer nanodielectric. According to the different physical and chemical properties of two-dimensional nanomaterials, the trap level and interface structure characteristics of nanodielectric are regulated. The regulation law of the different energy level of graphene (zero band gap), MoS2 (narrow band gap) and BN (wide band gap) on the trap level in the nanodielectric is explored. The microstructure information of interface is researched during the fabrication and failure process via Synchrotron Radiation Technique. Based on the First-principle, the law of trap level characteristics of new-type is studied. The relation of interface structure and trap lever is investigated. The mechanism of electrical insulating related to the interface structure and trap level is researched. This project provides a promising route for the design and fabrication of nanodielectric experimentally and theoretically. Thel aim is to obtain high electric insulation performance in the new-type 2D nanomaterials/polymer nanodielectric.

本项目计划利用二维纳米材料（石墨烯、硫化钼、氮化硼等）与绝缘聚合物构建新型纳米电介质，通过不同理化性质的二维纳米材料调控新型纳米电介质的陷阱能级特征、界面结构等微观结构，探索不同能级结构的新型二维纳米材料（石墨烯零带隙，硫化钼窄带隙，氮化硼宽带隙）对绝缘聚合物陷阱能级特征的调控规律；利用同步辐射技术原位探测材料在制备与失效过程中界面结构等微观结构演化信息；基于第一性原理理论模拟，分析新型纳米电介质的陷阱能级分布规律；全方位、多角度、深入系统地揭示界面结构与陷阱能级特征关联性的相关规律；阐明界面结构与陷阱能级特征对材料电气性能影响的机理，为新型纳米电介质制备提供理论与实验依据，以期获得高电气绝缘性能的新型聚合物基纳米电介质。

为了研制新型绝缘性能优良的纳米电介质材料，本项目以不同物理和化学性质的二维纳米片为填充相，制备多个具备不同界面结构特征的聚合物基新型纳米电介质材料系列；采用SEM、TEM、XRD、FTIR、SAXS、TSDC、PEA等测试方法，结合有限元模拟，系统地研究了零带隙、窄带隙及宽带隙二维填料对聚合物基纳米电介质界面结构与电气性能的影响规律；通过设计填料无机和有机界面，增强了聚合物/二维填料复合材料电气性能，设计制备了零维填料、一维填料与二维填料构建共填充体系，增强了聚合物基纳米电介质的电气性能。研究结果揭示了二维纳米材料的“结构效应”对新型聚合物基纳米电介质界面结构调控规律，阐明了界面结构与陷阱能级分布对纳米电介质电气性能的影响机理，为新型纳米电介质制备提供理论与实验依据。