基于GaN基异质结纳米线的压电电子（光电子）学效应研究

By combining semiconducting properties of GaN and the excellent mechanical and electric transport properties in One-dimentional (1D) materials, 1D GaN-based nanowires not only are ideal systems for studying the optic-electric-mechanical coupling properties in GaN-based materials, but also have potential applications in future novel multi-physics-coupling nanodevices. Studies in recent years have shown that, the Piezotronic and Piezo-phototronic effects are effective methods to enhance the performances of common semiconductor electronic and optoelectronic devices, which can also be used in fabrication of novel functional devices. Therefore, these two effects have attached wide interests from more and more researchers. On the basis of our previous studies, this project focuses on synthesis of GaN-based heterostructured nanowires, such as AlN/GaN, AlGaN/GaN, InGaN/GaN heterostructures, et. al. On the basis of the obtained nanowires and devices, the Piezotronic and Piezo-phototronic effects in GaN-based electronics and optoelectronics and corresponding fundamental physics will be explored. Novel functional devices will be designed and fabricated. This project's development has significant importance in the combination of optics, electronics and mechanics and their integration in nanoscale. The results of this project will expect to improve the practical application of GaN-based electronics and optoelectronics in the fields of novel sensors, new energy and biology.

一维GaN纳米线结合了GaN材料的半导体特性和一维纳米结构优异的机械柔韧、电学传输特性，是研究半导体纳米材料的力、电、光耦合物理过程的理想体系, 对开发新型器件具有重要理论价值和研究意义。近年来的研究表明，压电电子和压电光电子学效应不仅可以提高常规半导体光电器件性能，也可用于研制新型功能器件，因此引起了研究人员极大的兴趣。本项目在前期研究基础上，优化GaN基纳米线的生长，制备GaN基异质结纳米线，如AlN/GaN、AlGaN/GaN、InGaN/GaN等异质结结构。在此基础上，开展压电电子和压电光电子学效应在GaN基微纳电子和光电子器件中的基本物理机制，探索设计新型功能器件。项目的开展对于促进光子、电子和力学的结合及在微纳尺度下的集成具有重要意义，有利于推动微纳电子和光电子器件在新传感、新能源和生物等方面的广泛应用。

一维GaN纳米线结合了GaN材料的半导体特性和一维纳米结构优异的机械柔韧、电学传输特性，是研究半导体纳米材料的力、电、光耦合物理过程的理想体系。压电（光）电子学效应不仅可以提高半导体光电器件性能，也可用于研制新型功能器件。本项目开展了利用MOCVD技术生长高质量GaN基纳米线，制备GaN基微纳电子/光电子器件的研究。并在此基础上，探究了压电电子和压电光电子学效应在GaN电子和光电子器件中的基本物理机制。项目的开展及其成果对于促进光子、电子和力学的结合及在微纳尺度下的集成提供了新的方法和途径。