ZnO/NiO异质结纳米阵列的构筑及其紫外探测性能研究

In recent years, the ultraviolet (UV) detecting and imaging technology has become a new hot spot of photodetection research due to their important civil-military dual-use values. The aim of this research project is to design and synthesize a novel multifunctional material of ZnO/NiO heterojunction nanoarrays used for highly sensitive UV detection and high-resolution UV imaging. The main research is as follows: The ordered ZnO/NiO heterojuntion nanoarrays will be synthesized firstly on quartz/ITO substrate via electrochemical deposition and heat treatment method with the assistant of anodic aluminum oxide (AAO) template. The dimension and structure of the nanoarrays will be controlled in the growth process. The growth characteristic and formation mechanism of ZnO/NiO nanoarrays will also be explored. The interface defects of heterostructures and the relation to experimental parameters will be further analyzed and explored. An effective method will be found to control the structure defects in the heterostructures. Then, the UV photoelectric properties of nanoarrays and the relation to the dimension of nanostructures or the interface state will be analyzed deeply. Based on the current transport properties and the energy band structure of ZnO/NiO heterojunction nanoarrays, the photoresponse mechanism will be also discussed. We expect that this research project could be beneficial to the development and application of high-performance UV detecting or imaging devices.

紫外探测和紫外成像是近年来光电探测领域新兴的研究热点，具有极高的军事和民用价值。本项目旨在发展适用于紫外探测和紫外成像的新型多功能材料- - ZnO/NiO异质结纳米阵列，以期获得更高的灵敏度和分辨率；具体研究内容如下：首先采用模板电沉积与热氧化处理相结合的方法，在石英/ITO基体表面构筑有序直立排列的ZnO/NiO异质结纳米阵列，着重实现对材料尺寸和结构的控制合成，阐明沉积生长规律和形成机制；进而详细研究纳米异质结中微结构的组成与形态，探寻控制异质结界面缺陷的有效方法；在此基础上，深入分析纳米阵列的紫外光电性能及其与材料尺寸和界面结构的关联，结合对材料电输运特性和能带结构的研究结果，揭示ZnO/NiO异质结纳米阵列紫外响应的微观机理，促进基于异质纳米结构的高性能紫外探测和紫外成像器件的研发与应用。

紫外探测和紫外成像是近年来光电探测领域新兴的研究热点，具有极高的军事和民用价值。在本项目中，我们设计合成了一系列可用于紫外探测和紫外成像的新型多功能材料--ZnO/NiO异质结纳米阵列，研究了其特有的结构和紫外光电性能，具体研究内容如下：（1）首先采用模板电沉积与热氧化处理相结合的方法，在ITO基体表面构筑了有序直立排列的ZnO/NiO异质结纳米阵列，在一定范围内实现了对材料尺寸和结构的控制，并对沉积生长规律和形成机制进行了分析；（2）深入研究了纳米异质结中微结构的组成与形态，发现通过控制电沉积速率和热氧化条件，可以减少异质结中的界面缺陷和晶格畸变；（3）详细检测了纳米阵列的紫外光电性能及其与材料尺寸和界面结构的关联，发现界面结构对光电性能的影响起着决定性作用，结合对材料电子输运特性和能带结构的研究结果，探究了ZnO/NiO异质结纳米阵列紫外响应的微观机理，为高性能的紫外探测器的研发及应用提供了材料基础和理论参考。