长保持非破坏读出铁电存储器基础研究

Multiplayer ferroelectric thin films of BIT/PZT/BIT, BIT/PZT, and BIT were deposited onto (100) p-type silicon wafers using a pulsed excimer laser. A new ferroelectric memory in multiplayer ferroelectric films has been fabricated. The hysterestic loop, C-Vcharasteristic curve , I-V charasteristic curve , and dlog(I)/dlog(v)-V characteristic curve of this ferroelectric memory were obtained. Five important theories and laws were obtained: ①A modified empirical power law I=A(ξV)n is established for quantitatively describing detailed I-V dependence in ferroelectric multilayers. ②It can be used to calculate the voltage drop and built-in voltage at the interface of multiplayer structures. ③The frequency effect on the voltage drop and the built-in voltage at the interface. ④The relationships between fatigue and time of three structures were obtained. ⑤The relationships between each two parameters below: the voltage drop, built-in voltage, the frequency effect, and fatigue. Among the three structures studied in the present investigation, Au/BIT/PZT/BIT/p-Si(100) had the smallest voltage drop, built-in voltage, frequency effect, fatigue. Photographs and tests confirmed that the memory of this structure is relatively nonvolatile, yields a nondestructive readout, and exhibits little imprinting or depolarization. It is very useful for using these theories and laws to study the problems at interfaces. There have new development in theories and they have been affirmed by the references and editors of some important journals.

在成功用准分子激光扫描原位淀积获得优良特性多层铁电薄膜Au、BIT、PZT、BIT、SI基础希徊蕉源私峁挂约案慕嗖惚∧さ奈⒐劢峁梗缑嫣匦愿飨畹缪阅堋⑵＠汀⒈３至醒芯俊２⒂商绯胗氤〉淖饔玫汲隽礁鑫榷艽幢磲缏呒?”“0”的新存储理论４佣兄瞥鲆許i为基多层膜结构非破坏读出低漏电流密度高保持力铁电二极管存储器。