新型红外探测器应用相关的GaSb单晶杂质、缺陷及物性

GaSb single crystal is a very important material in fabrication of type II superlattice infrared detector and thermal photovoltaic devices. Research on the impurities, defects and electro-optical properties of GaSb are receiving considerable attention as the development and practical application of new type infrared detection technology. This project intends to focus on the electrical property influence of carbon, oxygen, hydrogen impurities and the interaction between impurities and defects. We need to analyze the controlling approach and photoelectric properties influence on GaSb material from interaction of native acceptor related defects and impurities, defects and impurity complex, electrical compensation of defects and impurities. To further clarify the property and forming regularity of native defects, research on deep level defects need to be carried out according to different doping GaSb samples. The research on impurity diffusion behavior in order to master the mechanism of native defect diffusion is also very necessary. The improvement of GaSb wafer surface quality has an important influence on the performance of epitaxy devices, so the studies on surface residual impurities, surface defects and property of native surface oxide are the same critical.

锑化镓单晶是研制II类超晶格中长波红外探测器、热光伏器件等的重要基础材料，随着新型红外探测技术的不断发展和实用化，近来有关GaSb材料的缺陷和杂质、光电性能等受到了重视和研究。本项目拟重点研究GaSb晶体中碳、氧、氢等杂质对晶体的电学性质的影响、杂质与缺陷相互作用等。 研究GaSb晶体中本征受主缺陷与杂质的相互作用、缺陷和杂质复合体以及缺陷和杂质的电学补偿对材料电学性能和光学性能的影响作用和调控途径等。针对不同掺杂的GaSb单晶开展深能级缺陷研究，旨在进一步阐明本征缺陷的属性和形成规律，分析评价缺陷对材料电学性质和光学性质的影响作用。研究GaSb单晶高温固态杂质扩散行为，掌握本征缺陷对扩散的影响作用和机理。通过对GaSb衬底表面的残留杂质、损伤缺陷、残留氧化层及其化学状态、真空热分解特性等的研究，促进晶片表面制备技术及外延材料质量和器件性能的提高。

开展了GaSb单晶材料制备、材料杂质与缺陷、表面制备、外延材料生长与器件等相关基础研究工作。分析了掺杂浓度对材料光吸收特性的影响规律，通过退火研究，掌握了GaSb单晶材料中原生缺陷的产生和转化及影响机理。采用(NH4)2S溶液对GaSb晶片表面进行了钝化处理，降低了表面态密度，提高了表面稳定性。通过钝化减少GaSb表面态获得了Au/n-GaSb肖特基接触电学性质的改善。通过Er离子注入制备了GaSb：Er薄膜材料，并通过退火分析了其磁性的影响机理。通过MBE系统在GaSb衬底上进行了HPT器件的生长，得到了晶格结构匹配，表面质量良好的器件材料，HPT器件的光增益最大可以达到800倍。有关材料缺陷、物性、掺杂、表面制备等研究成果在国内外学术期刊发表论文12篇，申请专利3项。