一维半导体银基氧化物的制备、组装及器件特性研究

The project is aiming at preparing one-dimensional silver oxide semiconductors, especially silver molybdates nanowires and silver vanadates nanobelts, and exploring their application in nanodevices and thin-film devices. We first synthesize and characterize the ultralong silver trimolybdates nanowires and silver vanadates nanobelts by a facile method, and then investigate their special electrical properties. According to the unique electrical properties, electronic devices based on these nanomaterials can be constructed , including nano-field-effect transistors and nano-Schottky-barrier diodes. Caculating their corresponding parameters, we believe that they can be good potential candidates in the area of nano-electronic devices. In addition, the ultralong nanomaterials can be well assembled through the technique of LB and evaporation-induced self-assembly. Ultrathin films and free-standing films can be obtained respectively. Concequently, devices based on these films can be constructed. As for the thin-film devices, investigation on thin-film transistors (TFTs) appear to be the fundamental research for the flexible transparent electronic devices in the future. Free-standing-film devices contain thin-film antimicrobials (TFAs), and free-standing-film sensors. All the exploration can help expand their application area in the macrofield for the ultralong sivler-based oxide semiconductors.

本项目旨在制备出一维银基氧化物半导体纳米材料，这里尤其指三钼酸银纳米线和钒酸银纳米带，然后将它们应用于纳米器件和薄膜器件。首先利用简单易操作的化学方法合成出超长的一维三钼酸银和钒酸银纳米材料，对它们进行表征，研究其电学性能；利用它们独特的电学性能，将这类一维半导体纳米材料构造成纳米器件，其中包括纳米场效应晶体管和纳米肖特基势垒二极管，并通过相应的公式计算出器件的各个参数，以探索此类材料在纳米电子器件领域应用中的可行性。此外，通过LB和蒸发诱导自组装的方式将此类超长的一维纳米材料进行组装，可以分别得到超薄膜和自支撑薄膜，由此分别构造出超薄膜器件及自支撑薄膜器件。超薄膜器件，包括薄膜场效应晶体管，用于未来柔性透明薄膜电子器件的基础研究；自支撑薄膜器件，包括薄膜抗菌剂以及薄膜气敏传感器。这些研究将有助于拓展一维银基氧化物半导体纳米材料。