基于铁磁金属/二维氮化硼隧穿层的二硫化钼晶体管自旋输运研究

The in-depth study of spin-polarized transport phenomena induced by spin-orbit coupling and the regulation of spin-polarized transport in MoS2 has been a focus of scientific research. In order to investigate the spin transport in MoS2 and improve the spin injection efficiency, utilizing the stronger spin-orbit coupling in MoS2 to control the electron spin and exploring the operation of the MoS2 spin transistor are important scientific problems. This project intends to adopt single-layer or few-layer BN as a tunneling insulating layer. The two-dimensional dielectric material and MoS2 will be held together by the van der Waals force, which can effectively release the interface stress, form steep interface and reduce the schottky barrier and contact resistance between ferromagnetic electrodes and two-dimensional channel material, so the efficiency of the spin injection can be improved. Meanwhile, the top gate transistor devices are employed to tune Rashba spin-orbit coupling intensity, and furthermore, modulate spin current flowing from the source to the drain. On the other hand, we will study the spin electronic production, transport and decoherence in MoS2 transistor under a strong magnetic field condition. In this process, the unconventional quantum Hall effect in single-layer MoS2 may be observed. Overall, we look forward to using ferromagnetic metal/BN/MoS2 contact structure in MoS2 transistor devices to present some new spin-related physical effects that can provide important parameters for MoS2 spin-polarized transport device design and thus open up a new road for the application of spin degree of freedom in a MoS2 device.

深入的研究MoS2中自旋轨道耦合诱导的相关自旋极化输运现象及自旋极化输运的调控等，已经成为当前科学研究的热点。为了研究MoS2中的自旋输运，提高自旋注入到MoS2的效率，利用MoS2中较高的自选轨道耦合实现对电子自旋的操作和研制基于MoS2的自旋晶体管是重要的科学问题之一。本项目拟采用单层或者少层BN作为隧穿绝缘层来有效降低铁磁电极与二维沟道材料之间的肖特基势垒和接触电阻，从而提高自旋注入效率。同时，利用顶栅晶体管器件调制Rashba 自旋轨道耦合强度，实现从源极到漏极间的自旋电流调制。另一方面，研究强磁场下MoS2晶体管中自旋电子的产生、输运和退相干等问题，探讨单层MoS2中观测到奇异量子霍尔效应的可能性。我们期待利用铁磁金属/BN/MoS2接触结构在MoS2晶体管器件中观测到自旋相关物理效应，为MoS2自旋极化输运器件的结构设计提供重要的参数。

深入的研究MoS2中自旋轨道耦合诱导的相关自旋极化输运现象及自旋极化输运的调控等，已经成为当前科学研究的热点。为了研究MoS2中的自旋输运，提高自旋注入到MoS2的效率，利用MoS2中较高的自选轨道耦合实现对电子自旋的操作和研制基于MoS2的自旋晶体管是重要的科学问题之一。本项目拟采用单层或者少层BN作为隧穿绝缘层来有效降低铁磁电极与二维沟道材料之间的肖特基势垒和接触电阻，从而提高自旋注入效率。同时，利用顶栅晶体管器件调制Rashba 自旋轨道耦合强度，实现从源极到漏极间的自旋电流调制。另一方面，研究强磁场下MoS2晶体管中自旋电子的产生、输运和退相干等问题，探讨单层MoS2中观测到奇异量子霍尔效应的可能性。我们期待利用铁磁金属/BN/MoS2接触结构在MoS2晶体管器件中观测到自旋相关物理效应，为MoS2自旋极化输运器件的结构设计提供重要的参数。发表相关SCI论文11篇。