等离子体刻蚀过程的计算机模拟

In the reactive plasma etching processes, studying the physical characteristics of the radio-frequency (rf) plasma sheath and interactions of the sheath with the substrate surface is very important for controlling the etching rates and the etching profiles. In this project, firstly, we have established a self-consistent theoretical model of the spatial-temporal variations for the rf sheath near the substrate surface, and simulated the distributions of the sheath electric field and the densities of the charged particles in the sheath. Secondly, we have established the theoretical model of the interactions of ions with the substrate surfaces, simulated the ion energy distributions (IEDs) and the ion angle distributions (IADs) with the Monte-Carlo method, and studied the influence of the discharge pressure on the IEDs and IADs. Finally, we have given the spatial-temporal evolution equations of the etching profiles and studied the influence of the discharge pressure and the rf power on the etching rates and the etching profiles. During the past three years, we have published 20 papers (SCI Index) for this research projectile, obtained Liaoning Natural Science Award (second-class), cultivated 7 students of the Ph. D and the Master degree, and held the 5th Asia-Pacific Conference on Plasma Science & Technology (Sept. 10-13, 2000, Dalian, CHINA).

研究反应性等离子体刻蚀工艺过程中等离子体鞘层对微结构刻蚀图形剖面的影响，模拟磁化射频等离子体鞘层中带电粒子的能量分布及角度分布、电场分布；模拟微结构的充电过程和反应性离子与槽孔表面的碰撞过程，研究旁刻现象的产生，计算表面的刻蚀率。本项目的研究将为优化等离子体刻蚀工艺过程提供必要的理论依据