ScSZ气液复相共沉积行为及柱状晶连续的致密电解质薄膜生长机理

This project will be focused on the SOFC electrolyte operated below the temperature of 600℃. The scandia stabilized zirconia (ScSZ) will be used as electrolytic materials because it has enough high stability in a reducing or oxidation atmosphere. According to the characteristics microstructure deposited by a vapor deposition and molten droplet deposition methods, respectively, a new deposition method for dense thin electrolytic film is put forward, which contains the two methods advantages. It has been reported that the ionic electrical conductivity of stabilized zirconia electrolyte is dominated by the resistance to ion transportation within a grain at higher temperatures (about above 700℃), and on the other hand, the ion transportation is dominated by the grain boundary resistance at low temperatures. A new idea is also put forward which it is considered that the ohmic polarization will be further reduced if the thin film with a columnar grain growth across lamellar interfaces. The behavior of gas-liquid codeposition will be studied though systematic experimental research. The behavior of gas-liquid codeposition will be discussed based on these results. A fast fabrication method for dense ScSZ thin film with the columnar grain growth in the thin film will be established. Based on he results, some benefit solutions will be provided for the design and preparation of high performance SOFC electrolyte.

本项目针对低温SOFC（工作在600℃以下）电解质展开研究，以在还原或氧化气氛下均稳定并具有高离子导电率的氧化钪稳定氧化锆（ScSZ）材料为研究对象。针对气相沉积和液滴沉积的特点及其结构特征，提出了集两种方法优势为一体的气液复相共沉积快速制备致密电解质薄膜的新方法。基于低温下氧化锆基电解质的晶内离子电导率高于晶界离子电导率的研究成果，提出了具有柱状晶微观结构特征的电解质薄膜将会进一步降低低温SOFC的欧姆极化的新思路。研究揭示气液复相共沉积行为。研究确立可面向具有复杂表面结构、低欧姆极化的的致密电解质薄膜快速制备方法，为高性能SOFC电解质层的设计与制备提供科学依据。

本项目针对SOFC电解质展开研究，以在还原或氧化气氛下均稳定氧化钇稳定氧化锆和氧化钪稳定氧化锆为研究对象。针对气相沉积和液滴沉积的特点及其结构特征，提出了集两种方法优势为一体的气液复相共沉积快速制备致密电解质薄膜的新方法。基于低温下氧化锆基电解质的晶内离子电导率高于晶界离子电导率的研究成果，提出了具有柱状晶微观结构特征的电解质薄膜将会进一步降低低温SOFC的欧姆极化的新思路。通过系统试验研究气液复相共沉积规律与共沉积薄膜的组织结构控制因素，揭示了气液复相共沉积行为与致密的、柱状晶连续生长的薄膜生长机制。确立了可面向具有复杂表面结构、厚度小于10微米的致密电解质薄膜快速制备方法，为高性能SOFC电解质层的设计与制备提供科学依据。