硅尖锥离子掺杂氮化碳包层膜的场电子发射特性研究

In this project, we developed a field emission measurement system which can measure several samples and can work from low temperature to high temperature. We prepared silicon micro-tip arrays on Si(100) substrates. Carbon nitride (CNx) thin films were deposited on silicon micro-tip arrays using medium frequency magnetron sputtering technology. The emission current density of arrays coated with CNx thin films is 3.2mA/cm2 under the electric field of 32.8V/μm. Our results indicated that field emission properties can be improved by low-energy N+ bombardment. We obtain CNx films with turn-on field of 1.2V/μm and stonger emission current (1mA/cm2 under the electric field of 1.4V/μm). We still carried out researches on semiconductor doping of CNx films and obtain n type doping CNx films with better field emission characteristics.

等离子体增强CVD法制备硅尖锥氮化碳包层膜；进行离子注入n型和p型掺杂，研究掺杂效应⑺鹕诵вΑ⑼嘶鹦вΑ⒉煌珻/N比例、不同晶态及高温、低温和放射性辐照等恶劣条件对氮化碳电子场发射特性的影响；研究性能优于金刚石冷阴极的氮化碳场电子发射冷阴极及其电子发射机理，为其在微电子器件和平板显示屏的应用提供科学依据和技术储备。