单粒子效应加速器模拟研究

In order to simulate the single-event effect (SEE) produced by the passage of single ion ionzing particles through microelectronic devices in space., experimental testing technique of heavy ion induced single event upset (SEU) has been developed at HI-13 tandem accelerator. Monoenergetic heavy ions, well-distributed and weak enough intensity were obtained by using Q3D magnetic spectrometer. The irradiation ions were monitored and measured by a semiconductor detector located in the scattering chamber and a position sensitive semiconductor detector located at the focal plane of the Q3D spectrometer. Curves of SEU cross section versus linear energy transfer (LET) have been measured with eight ions for some SRAM devices. Predictions of SEU rates have been derived from the test data coupled with models of heavy ion and proton environment and models of the interaction of ions with microelectronic devices. The technique is available for the experimental SEU ground testing of microelectronic devices resisting radiation in space.

建立利用HI-13串列加速器和Q3D磁谱仪进行航天微电子器件单粒子效应（SEE）地面模拟实榈墓娣痘馐约际酢Ｍü舛ň哂胁煌啥鹊拇娲⑵鳎≧AM）的SEU截面随离子LET值变化关系曲线，确定SEU阈值、临界电荷等参数及其与集成度的关系。开展实验结果与理论模型嘟岷系腟EE机理研究。测试结果可为航天单粒子事件率预估提供可靠的数据，机理性研究结果为航天器和战略核武器的抗辐射加固设计提供依据。