辐照及高电场应力诱发的AlGaN/GaN HEMT 器件退化机制与模型研究

Benefit from the heterojunction structure, AIGaN/GaN HEMT (high electron mobility transistor)has become one of the most potential RF and microwave devices. A1GaN/GaN HEMT is usually applied under high voltage and radiation environment, so the reliability of the device becomes a quite notable question. In this project, high-electric-field stress degradation and radiation damage in A1GaN/GaN HEMT are studied systematically. Based on in-depth analysis of the affecting mechanism of the various major radiation particles in the space radiation environment on GaN-based semiconductor materials and HEMT devices, a variety of radiation sources are used to investigate the radiation effect in GaN material and HEMT ,thereby the radiation damage mechanisms of AlGaN/GaN HEMT are unveiled and radiation damage model is constructed. Based on the in-depth study of several high field degradation model , a high-field coupling effect degradation model is proposed. The degradation of the devices under DC and RF stresses is investigated, the high-field damage model is obtained. By means of simulation and experiment, radiation hardening scheme and high-field reliability improvement scheme are proposed. The project has great scientific significance and has a role in promoting the commercialization process for GaN-based microwave power devices.

得益于异质结结构，A1GaN/GaN HEMT成为当前最具发展潜力的射频、微波器件之一。A1GaN/GaN HEMT器件长时间工作在高偏置和空间辐射环境下，所以器件的可靠性问题值得关注。本项目对A1GaN/GaN HEMT高场电应力退化和辐照损伤进行深入而系统的研究。基于空间辐射环境下各种主要辐射粒子对GaN基半导体材料和HEMT器件的作用机制深入分析，采用多种辐射源系统地研究材料和器件的辐射损伤效应，得到AlGaN/GaN HEMT的主要辐射损伤机制并建立辐照损伤模型；在深入研究现有的几种高场退化模式基础上，提出一种高场退化的耦合效应模型；研究器件在直流和射频应力下的退化，得到高场损伤模型；借助仿真和实验方法，提出抗辐射加固和改善高场可靠性方案。项目的研究具有重大的科学意义，对于GaN 基微波功率器件商业化进程具有推动作用。

AlGaN/GaN HEMT作为GaN基微电子器件的代表，可广泛应用航天等领域。A1GaN/GaN HEMT器件长时间工作在高偏置和空间辐射环境下，所以器件的可靠性问题值得关注。项目的研究目的是通过理论、仿真和实验，系统而深入的研究GaN 基HEMT器件的辐射损伤效应和高场退化效应。基于空间辐射环境下各种主要辐射粒子对GaN基半导体材料和HEMT器件的作用机制深入分析，采用多种辐射源系统地研究材料和器件的辐射损伤效应，得到AlGaN/GaN HEMT的主要辐射损伤机制并建立辐照损伤模型；在深入研究现有的几种高场退化模式基础上，提出一种高场退化的耦合效应模型；研究器件在直流和射频应力下的退化，得到高场损伤模型；借助仿真和实验方法，提出抗辐射加固和改善高场可靠性方案。项目取得了以下主要研究成果：（1）建立适用于空间辐射环境的AlGaN/GaN HEMT器件辐照损伤模型；给出GaN材料和HEMT器件在辐照下的退化机制；提出AlGaN/GaN HEMT器件抗辐射加固方案。（2）提出高场退化的耦合效应模型，给出不同高场应力下器件退化的物理机制，建立AlGaN/GaN HEMT器件的高场损伤模型，提出AlGaN/GaN HEMT器件改善高场可靠性方案。（3）建立适用于辐照和高电场工作环境需求的AlGaN/GaN HEMT器件模型参数。项目的研究适应GaN基微波/毫米波器件和电路的发展要求，为新一代高频电子的发展提供必要的技术支持，对我国抢占新的战略制高点具有重要的战略意义。因此本项目的研究具有重大的科学意义和应用价值，对于GaN 基微波功率器件商业化进程具有推动作用，在民用经济、航空航天以及军事领域具有极其广阔应用前景。