面向分子器件的新型低维功能结构的构筑与调控

Molecular devices and low-dimensional functional structures are significant for future high-performance information systems. With 10 years of overseas experience, the applicant has been devoted to studying the nanostructures and electronics of novel low-dimensional functional molecules, especially involved in the fine characterization and controlling of their electronic structures. The applicant has extensive and close collaborating network in Europe and therefore has the priority to carry out world-leading advanced experiments, providing fine characterizations of functional molecular electronics using multiple comprehensive techniques which are still developing in China. Available advanced facilities include, and are not limited to, the Italian National Synchrotron Radiation Facility (ELETTRA), the German National Synchrotron Radiation Facility (BESSY II), the Swedish synchrotron (MAX IV) and the High Harmonic Generation Laboratory of Uppsala University in Sweden (HELIOS). These techniques will complement the existing Scanning Probe Microscope (SPM) platform with ultra-high resolution in the applicant's research group. This project will cross-fuse various advanced experimental methods at our home-lab and abroad. Starting from the electronic structure of the molecular precursors, we will build novel low-dimensional functional structures similar to graphene. Finally, we will manipulate/control the electronic properties of the low-dimensional structures through external fields, intramolecular, intermolecular and molecular-substrate interactions, enabling flexible thin films with excellent electronic properties, preparing for future high-performance molecular devices.

分子器件与低维功能结构是构筑未来高性能信息系统的重要组成部分。申请人具有十年海外学习科研经历，一直致力于新型低维功能分子纳米结构及电子学方面的研究，尤其是电子结构的精确测定与调控。申请人在欧洲拥有广泛密切的合作网络，具有国内尚在发展中的、世界一流先进仪器的优先使用权，可以进行功能分子电子学特性的多维度精细测量。可用仪器包括意大利/德国/瑞典的国家同步辐射中心的相关实验线站以及瑞典乌普萨拉大学的高次谐波激光实验室，这些仪器与申请人在国内现有的超高分辨探针显微镜实验平台优势互补。本项目将交叉融合国内外的多种先进实验手段，从研究低维功能结构前驱体的精细电子结构着手，从头构筑与石墨烯类似的新型低维功能结构，之后通过外加场、分子内、分子间、分子-基底间相互作用等多种手段来调控低维功能结构的电子特性，为未来的高性能分子器件提供优良电学特性的柔性薄膜与科学依据。

信息技术在社会中的快速普及与应用，核心是以集成电路、芯片为代表的半导体工业的发展与崛起。目前，硅的物理特性逼近极限，发展放缓。自1970年代中期发展起来的分子电子学及分子电子器件，因为其小尺寸、多样性、易操纵等特性，为超越传统硅基半导体芯片提供了可能。分子电子学采用“由下而上”纳米制造法，由分子、原子等最小单元构建功能结构，能够生产出更高集成度、更稳定、更少缺陷、更均匀、更有序的新型电子器件。本项目针对分子电子学、新型二维结构的可控制备及其电子特性展开了系统、深入的研究。交叉融合扫描探针显微技术、基于同步辐射的光电子能谱技术等合多种国际前沿实验与测量手段，制备新型二维材料及其功能结构，对其进行实空间、介观精细形貌、电子结构表征的研究，成功精确测定低维功能结构前驱体分子电子结构，实现了低维功能结构的可控制备与表征并且发展了基于同步辐射、扫描探针技术的集成微纳探测新技术，为新型二维电子信息材料的大规模工业化可控制备打下科学基础。