界面调制对铁磁金属自旋注入效应的影响

In order to improve the application of the ferromagnetic metals(FM) in the low-dimensionality nano-spintronic devices, this proposal gives a research plan to investigate the correlation between the interfacial properties and the spin states distribution & spin transport in the FM/graphene & FM/topological insulator. It inculdes the preparation and characterization of the FM/graphene and the FM/topological insulator samples by atomic-scale techniques. The non-local and the standard/inverted Hanle measurements are included as well. These experimental results can offer the informations on the spin-transfer, spin accumulation, magnetic anisotropy, spin tunneling, exchange bias interaction at the interface in FM/non-ferromagnet structures. Particularly, the influences of the disorder/ordered crystal structure, the localized states and the spin-orbit interactions at the interfaces on the spin injection effects will be discussed in details. In the meanwhile, an ATK modeling will be developed to give the theoretical explanation on the spin transport in these samples. Based on these experimental and theoretical results, a mechanism of the interface tuning effects on the spin injection of the FM would be obtained. Moreover, the FM/graphene and FM/topological insulator structures with high spin injection is expected to be achived. This proposal can enhance the application of the FM materials in spintronic devices.

本项目针对铁磁金属在低维纳米自旋电子器件中的应用，利用原子尺度的制备与表征手段，具体研究铁磁金属/石墨烯、铁磁金属/拓扑绝缘体界面性质与自旋态分布与自旋输运特性之间的关联特性。并利用Non-local自旋电阻检测与正/反Hanle效应测量，开展纳米尺度下的铁磁金属/非磁微结构中的磁翻转特性、自旋积累效应、磁各向异性、自旋的量子隧穿、磁偏置交换作用，以及对外场的响应特性等研究。结合ATK理论计算，揭示界面处无序/有序晶体结构、界面局域态及界面处自旋-轨道相互作用等对自旋注入的影响。建立界面调控铁磁金属自旋注入效应的理论机制；探讨设计并制备铁磁金属/石墨烯、铁磁金属/拓扑绝缘体高自旋注入的微结构。为新型铁磁金属为基的自旋电子器件提供实验及理论依据。

本项目针对铁磁金属在低维纳米自旋电子器件中的应用，利用原子尺度的制备与表征手段，结合各种纳米结构，具体研究铁磁金属/石墨烯、铁磁金属/二硫化钼界面性质。对铁磁金属/石墨烯、铁磁金属/ MoS2界面处的结构、成分、缺陷、应力分布、电子态、自旋态等进行了深入而系统的表征与计算分析。揭示了铁磁金属/石墨烯、铁磁金属/MoS2界面性质与自旋态分布及自旋转移特性之间的关联特性。并利用自旋电阻检测与Hall效应测量，开展纳米尺度下的铁磁金属/非磁微结构中的磁翻转特性、自旋的量子隧穿、自旋转移、磁偏置交换作用，以及对外场的响应特性等研究。结合ATK与FEM理论计算，揭示界面处无序/有序晶体结构、界面应力、界面局域态及界面处能量转移等对自旋注入的影响。建立界面调控铁磁金属自旋注入效应的理论机制；探讨设计并制备了铁磁金属/石墨烯、铁磁金属/二硫化钼高自旋注入的微结构。为新型铁磁金属为基的自旋电子器件提供实验及理论依据。