钙钛矿BaSnO3透明导电薄膜生长机理及性能调控研究

Transparent conducting oxide (TCO) films is widely utilized in the respects of photoelectron and information technology due to its high room temperature conductivity as well as visible transmittance. It was recently found that the donor-doped perovskite BaSnO3-based materials have excellent room temperature optical and electrical properties as well as thermal stability, which is suitable to construct all-perovskite multilayer heterojunctions for innovative micro- and nanoelectronic devices. However, the optical and electrical properties for BaSnO3-based films show very large fluctuation for different deposition method, and the physical mechanisms are not yet clear currently. In this proposal, we will prepare BaSnO3-based films by chemical solution deposition. The effects of precursor solution, lattice mismatch, rare earth elements doping in Ba-sites as well as 4d metal doping in Sn-sites on films optical and electrical properties will be investigated. The main factors in controlling of the optical and electrical properties for solution derived BaSnO3-based films will be studied, and the correlation between processing, dislocation as well as physical properties will be established. The results will provide guidance to optimize the performance of BaSnO3-based films.

透明导电氧化物薄膜因具有高的室温电导率和可见光透过率，在诸多领域有着广泛的应用。基于钙钛矿结构的BaSnO3基薄膜具有优越的室温光电性能，从而有望在全钙钛矿透明器件等领域获得重要应用。但是，目前BaSnO3基薄膜的光电性能因制备工艺不同而存在巨大差异，且其光电性能调控机制尚不清楚。本项目将在前期已有BaSnO3基薄膜的研究基础上，采用适合大尺寸薄膜生长的溶液法制备该类薄膜。通过调控前驱胶体、基片-薄膜晶格失配度、Ba位稀土元素及Sn位4d金属元素掺杂，获得具有高室温电导率及可见光透过率的BaSnO3基薄膜。揭示影响BaSnO3基薄膜光电性能的主要因素，构建薄膜生长机理-微结构-光电性能之间的关联，从而为BaSnO3基薄膜的光电性能优化提供相关实验和理论依据。

透明导电氧化物薄膜因兼具高电导率和透过率，在如触摸显示和光伏领域等领域有着广泛的应用。探索具有高载流子迁移率透明导电氧化物薄膜在降低器件功耗方面意义重大。钙钛矿宽带隙透明导电BaSnO3基单晶已被验证具有超过300 cm2/Vs的室温载流子迁移率，因而近来得到了广泛研究。但是，目前报道的BaSnO3基薄膜的室温载流子迁移率存在巨大差异，且基于物理法获得的薄膜在样品尺寸上存在极大限制。本项目基于一种适合制备大尺寸薄膜的化学溶液法，系统开展了薄膜制备工艺和掺杂对BaSnO3基薄膜光电性能的影响研究，发现了多种获得高室温载流子迁移率的途径，初步构建了BaSnO3基薄膜生长机理-微结构-光电性能之间的关联，为后续该类薄膜的光电性能优化提供了相关实验和理论依据。