表面等离激元在电接触过程中对电子输运特性影响研究

Negative resistance phenomenon occurred in the PN tunnel diodes firstly. Esaki and coworkers explain it by tunnel theory and energy band theory. Hicknott found the negative resistance phenomenon occurred in MIM afterward. Because the MIM is a popular structure in electronic device, the study of the negative resistance phenomenon in MIM is more important. In 1970,Dearmaley presented an model of conductive pillar of MIM and S. Gravan, R. D. Goald and coworkers calculated and analyzed the model. However, they did not give a reason of the current recovery after negative resistance phenomenon appearing..We study the effects of negative resistance phenomenon to the electrons transmission and light emission by a series of experiments of coupling of SPP and electrons, photons, and other polaritons. And then calculate with the molecular orbital theory, quantum chemistry theory and hybrid orbital theory to explain the effect of SPP to the negative resistance phenomenon successfully. We also present an model of electron transmission, which is original in the world. .Besides, we constructured a system for SPP real-time measurement, which provides a method of quantitative measurement. This system is original in our country. And we also studied the application and development of the negative resistance phenomenon..

. 本研究是以电接触过程中的金属-氧化物-金属和金属-氧化物-氧化物-金属的接触缑嫔铣鱿值谋砻娴壤爰ぴ⊿PP）为对象，从理论上推导，和从实验上开发实时演变分析系统去研究SPP的两种存在状态：不产生辐射状态和可产生辐射状态对电子输运（负阻特性、舐胩匦缘龋┑挠跋欤Ｖせ竦每煽康牡缃哟プ饔τ美砺鄣难芯抗ぷ鳌