InAsP轴向能带调控半导体纳米线的可控生长及其光电特性研究

III-V compound semiconductor nanowire with narrow bandgap is an important research topic of the integrated nanoscale electronics and optoelectronics for its potential application in the infrared photo detection. Driven by the demands for nanoscale infrared semiconductor optoelectronic devices, and taking advantage of our research background and technological capability for controllable synthesis and the optoelectronic detection of micro/nano materials, we propose a research on the controllable growth of the axially bandgap-tunable InAsP nanowire and its optoelectronic properties. Firstly, the size-controllable synthesis of the axially band-modulated nanowires, including composition (bandgap) gradually changing and sharply changing InAsP hybrid nanostructures, will be carried out. Based on the above nanostructures, a series of photodetector devices will be fabricated, followed by a systematical investigation of their photo-electronic properties, which include the bandgap, the mechanism of the electron transport, the transmission and recombination of current carriers, the spectral feature, responsibility, response time, and their dependence on the size and the composition of the nanowires. This proposal will certainly open new applications in novel optoelectronic devices, and will improve the original ability and international influence power within the information device research areas.

III-V族窄带隙半导体纳米线在红外光电探测领域有重要的研究意义和巨大的潜在应用，是纳米光电子技术的重要研究方向。基于前期我们在III-V族纳米线和能带调控纳米结构半导体材料的生长、光电特性研究已取得的成果，本项目提出窄带隙的III-V族半导体轴向能带连续递变和突变InAsP纳米线的可控制备与红外光电特性的研究计划。项目拟利用反应源移动式装置，生长尺寸可控的高质量组分连续递变及突变的InAsP纳米线，在此基础上制备基于单根纳米线的系列光探测器件，系统研究组份和尺寸对纳米线的带隙、光响应波长与响应率、载流子输运特性等的影响，探索分析能带调控对光电性能的影响机制，为材料在红外光电探测领域的应用奠定基础。此项目的开展，将能提高我国在新型红外光电信息器件研究领域的原创能力和国际影响力。

低维度半导体纳米材料的可控制备与光电性能研究是下一代高集成器件应用的基础。在该项目中，先后制备了一系列新型Ⅲ-Ⅴ族纳米材料，包括InP纳米线，InGaAs纳米线，InGaAsSb纳米线，和InGaAsSb纳米片；开展了能隙可调的Ⅱ-Ⅵ族CdSSe纳米线的组分梯度渐变或陡变的异质结构纳米线的可控合成；开展了基于硫族过渡金属化合物纳米片的能带调控，如MoS2、We2、WS2和WSe2等二维层状材料横向/纵向异质结的可控合成；开展了钙钛矿薄膜及纳米线的可控制备，包括有机-无机杂化钙钛矿薄膜，全无机钙钛矿纳米线等。对所制备组分梯度或陡变异质结构纳米线、能带调控的二维层状材料，新型钙钛矿纳米材料纳米结构进行了光电功能表征。首先，研究了Ⅲ-Ⅴ族纳米材料的红外光电响应特性；第二，研究了Ⅱ-Ⅵ族CdSSe纳米线能带递变引起的电子输运特性、载流子的传输和复合特性，光电响应特性，以及激射过程；第三，研究了二维层状材料异质结构的非线性光学以及光电响应特性；最后，研究了钙钛矿纳米材料的电光和光电特性、激射行为。研究结果对于该领域的基础研究以及实际应用具有重要意义。