开管镓扩散中镓在SiO2-Si表面和界面的分布行为研究

Hydrogen(H2) is used to discompose Ga2O3 to obtain surface constant source by open-tube mode, and contronable doping of Ga is realized in the Si-SiO2 system. The means of SIMS, SRP, AFM were employed to analyze the samples processed by constant source, limited source and reoxidation at different ambience and other conditions.The distribution conduct and movement trace of Ga at the vapor-solid SiO2 phase interface, SiO2-Si internal interface and the near surface of Si under the condition of constant source doping are disclosed for the first time.The module of open-tube Ga-diffusion is firstly set up, which is based on the analysis of the above mechanism. That is an innovation result. The redistribution rule of Ga in the ambience of H2, the reverse diffusion rule of Ga at the near surface of Si and the new segregation rule of Ga in the ambience of dry O2 and wet O2 respectively are all found for the first time. A mathematic expression of the final concentration value at the Si side of the interface is also educed. That is a breakthrough result.The mechanism of the negative resistance effect of transistor and the means to reduce it are systemiclly expatiated in the view of devices physics. In a word, the open-tube Ga-difusion theory is set up, which will provide the theoretical basis for the application of P-type Ga in the area of sub-micrometer devices, power devices and electric power devices and also the enhancement of the performance of the above devices.

研究Ｇa的高蒸气压下，Ｇa在sio2/si系内的动态分布行，sio2-sibi表面，界面最高平衡浓度；再分布过程Ga在sio2-si界面扩散规律和界面两侧的杂质分布行为；再分布后的硅表面蚊埠蛃io2层产生的缺陷；磷再分布热氧化过程基区Ga在Sio2-si界面的分凝特征；找出Ga扩晶体管产生大负阻效应的原因。建立开管扩Ga模型，为其广泛应用提供理论依据。.