4H-SiC纳米线阵列结构精细调控及其日盲型紫外光探测性能研究

In the present work, directed by the investigation of light blind UV detector with high performance, 4H-SiC nanowire arrays are considered as the key source material systems. To meet the challenge of the fabrication of UV detector with excellent properties such as light blind, high sensitivity, high gain and low noise, the precisely controlled growth of the arrays is accomplished firstly by tailoring the processing parameters for the growth of the arrays such as the periods, fill rates, sizes, structures, and crystal orientations, space arrangements and synthesis temperatures. Subsequetly, the research work will come to disclose the correlation between the structures and properties of 4H-SiC nanarrays, and clarify their characteristics and optical detection mechanism of the UV detectors, which makes it be promising for building solar blind UV detectors with excellent performance by design and optimization of the array structures. Current work is an important extension of our previous research, and could present some basic data and key techniques for the exploration high-temperature UV detector fabricated by the source materials of 4H-SiC nanoarrays, suggesting its remarkable significance in the science and potential applications.

本项目拟以高性能日盲型紫外光探测器的研发为导向，优化选择4H-SiC纳米线阵列为材料体系，通过制备工艺的精细设计与调控，实现纳米线阵列的生长及其结构参数如周期、填充率、尺寸、结晶取向、空间排列等的精细控制，进而探索阵列结构对其室温和高温光探测性能的影响，最终构筑具有高灵敏、高增益、低噪声的新型日盲型紫外光探测系统。研究工作将深入揭示4H-SiC纳米线阵列结构与光探测性能间的关联，阐明其光探测特性与机理，有望通过阵列结构的精细设计与优化，获得性能优异的能在高温下稳定工作的日盲型紫外光探测器。相关工作是在大量研究积累基础上的重要延伸和拓展，项目的实施将为SiC纳米线阵列用作高温紫外光探测提供一定的基础数据和关键技术，具有显著的科学意义和潜在的应用价值。

项目通过对SiC纳米线阵列的制备研究，实现了对4H-SiC纳米线阵列的精细调控，并借助光刻和电子束沉积技术等半导体工艺流程，实现了SiC单根纳米线和纳米线薄膜光电探测器的研制。通过介电泳力自组装技术，实现了基于Si/SiO2和柔性PET基底上的SiC有序纳米线阵列光电探测器研制。实验结果表明，所研制的光电探测器具有高灵敏度、高稳定、响应速度快，可重复性好，且能在高温200度温度下实现对紫外光的检测。所取得核心数据结果如下：1）单根SiC光电探测器具有快的响应时间（上升响应时间：200ms，下降时间90ms）,在5V偏压下和420nm蓝光入射下，光谱响应度为3.3*106A/W和9.7*108%，且在室温环境为200℃下具有稳定的检测紫外光的能力。2）SiC单晶纳米线薄膜光电探测器能够高灵敏地检测420 nm的入射激光，且具有优异的可重复性和稳定性，光电电流和光功率密度为良好的线性关系。3）在Si/SiO2和PET柔性衬底上集成的光电探测器性能显著提升，并对比了这二种光电探测性的主要性能进行了对比，并分析了其内在的影响机制。