银掺杂氧化锌纳米结构的制备及高压研究

Doping in ZnO with selective elements could adjust its luminescent characteristics and accelerate the course of their practical applications. In this regard, optimization of ZnO optical properties through doping has been encouraged. In this investigation, Ag doped ZnO is synthesis by sol-gel processes. Restrictive relationships between microstructures and optical parameters are investigated, which could provide a new study way to tuning crystal structure and the band gap by Ag dopants. On this basis, the high-pressure behavior of Ag doped ZnO has been investigated by angle-dispersive synchrotron powder X-ray diffraction and Raman spectroscopy techniques in a diamond anvil cell. Subsequent ab initio calculations for Ag doped ZnO could be carried out to obtain a complementary insight into the high-pressure behavior. These results should be helpful in evaluating their production under different synthesis conditions and understanding the physical properties of Ag doped ZnO and related semiconductors.

以掺杂的方式对氧化锌性能进行调控，可以使掺杂后的氧化锌半导体材料在信息处理、光催化和自旋电子器件等领域具有潜在应用。因此氧化锌的掺杂研究受到了材料、化学和物理学界的广泛关注。本项目将通过水热合成和溶胶凝胶的方法制备银掺杂氧化锌纳米材料，探索利用银掺杂剂对晶体结构和帯隙进行调控的有效途径，建立材料微观结构与宏观光学参数间的关系。在此基础上，采用原位高压金刚石压砧超高压实验技术，并结合基于密度泛函的第一性原理建立合适的物理模型，从一个新的维度来了解银掺杂剂对氧化锌半导体晶体结构和电子结构的影响。为设计和制备性能优良、参数可控的氧化锌半导体器件提供重要的实验数据和理论依据。

设计与制备了不同形貌和不同浓度的银掺杂氧化锌纳米结构，实现了以掺杂方式对晶体结构和帯隙进行调控，发现了掺杂带来的晶格缺陷导致了样品中产生深层能级发光，研究了高压下银掺杂氧化锌纳米颗粒和纯氧化锌六角纳米片结构的稳定性和构象变化规律，找到了它们的相变压力及体弹模量，确定了它们的状态方程。从一个新的维度来了解银掺杂剂对氧化锌半导体晶体结构和电子结构的影响。为设计和制备性能优良、参数可控的氧化锌半导体器件提供重要的实验数据和理论依据。