离子辐照铟镓氮(InGaN)的微观损伤机理与非晶化过程研究

Indium gallium nitride (InGaN) is an important group III/V direct band gap semiconductor materials, which has been widely used as photovoltaic materials. Ion implantation is one of widely-used techniques in the fabrication of semiconductor devices. Thus, the study of ion-irradiation damage in InGaN is crucial to its application. This project, combining the simulation and experiment techniques, is aimed at studying the generation, accumulation and evolution of the defects in the InGaN implanted by ions at different temperatures. In the experiment, ion beam analysis and other material characterization methods will be used to study the radiation damage induced by ion implantation under different conditions. At the same time, we will utilize molecular dynamic simulations to investigate the micro-process of the irradiation damage buildup in InGaN samples. And, the Rutherford backscattering spectra in channeling conditions from irradiated InGaN would be simulated by our recent developed code Rutherford Backscattering Spectrometry in Arbitrary Defected Crystal. Comparisons of the experimental and simulation results would reveal the correlations between the irradiation resistance of InGaN and the In components, and the influence of temperature on the evolution of defects and recombination. The work will not only provide basic data for ion implantation techniques of InGaN semiconductor, and also guide the development of In-rich anti-irradiation InGaN. Besides, this research will also provide a method to develop other wide bandgap semiconductor materials which have an good irradiation resistance properties. Through this research, we will promote some international cooperation and cultivate 4-6 graduate students. At the same time, we will develop an software with full authority and publish at least 8 high-level papers.

铟镓氮(InGaN)是重要的3/5族直接带隙半导体材料,被应用于光电子器件生产。离子注入是半导体器件制备的重要技术。因此,研究离子束辐照损伤对InGaN的应用至关重要。本项目采用理论与实验结合的技术路线，研究不同温度下离子注入InGaN导致缺陷的产生、积累以及复合等演化过程。用离子束分析和其它材料表征手段研究不同条件离子注入InGaN引起的辐照损伤；用分子动力学方法模拟InGaN的辐照损伤微观过程，并利用沟道背散射模拟程序研究辐照导致非晶化过程。对比实验与模拟结果，获得辐射损伤过程与In组分的相关性，揭示温度对缺陷产生、复合等演化过程的影响。研究结果将为离子注入InGaN技术提供基础数据，为开发耐辐照高In组分InGaN材料提供科学依据。并为开展同类型半导体材料抗辐照效应研究提供新方法。项目组将通过该项研究推动国际合作，培养研究生4-6名，开发出自主知识产权软件，发表高水平论文8篇以上。

InxGa1-xN是一种具有重要应用前景的半导体材料，研究离子辐照损伤对离子注入技术在InxGa1-xN中的应用具有重要意义。本项目从理论模拟和实验两个方面对离子注入在全组分InxGa1-xN材料中引起辐照缺陷的产生、积累、复合的过程进行了系统研究。.1、利用分子动力学（MD）模拟研究了不同In组分InxGa1-xN在常温下辐照缺陷的形成及演化过程，并与实验数据进行了比较。结果表明：不同组分InxGa1-xN组成原子的平均离位阈值能变化不大，InxGa1-xN的抗辐照能力主要取决于离子辐照过程中晶格缺陷的累积速率。.2、通过理论模拟，研究了常温下离子辐照InxGa1-xN的非晶化过程，同时开展了相应的离子辐照实验。理论研究表明，InGaN的抗辐照能力随着In组分的增加而降低，这与实验观察结果相一致。不同于SiC等三代半导体材料，快重离子强烈的电子激发可以导致InGaN的辐照损伤。.3、通过建立带有温度参数的理论模拟方法，模拟了不同温度下的离子束辐照效应及非晶化过程。结果发现，高温可以导致InGaN中辐照缺陷的动态恢复，从而有效降低辐照在材料中的缺陷浓度，仅当材料中缺陷聚集到一定程度，形成较大尺寸缺陷后，才会在高温辐照中聚集增长。.4 利用MD模拟与沟道背散射（RBS/C）模拟，研究了不同温度下InxGa1-xN中辐照损伤的形成及演化过程。得到的RBS/C谱和实验谱相互符合，未来可将RBS/C谱的模拟方法应用到更多晶体材料的研究中。.综上，本课题圆满完成了研究任务和目标。受项目资助，共培养6名博士研究生，7名硕士研究生，发表各类学术论文6篇。参加国内会议报告4次，其中口头汇报1次。