碳化硅纳米材料表面/界面极化弛豫机制及其高温微波吸收性能研究

SiC nanomaterials, includes nanoparticles, nanowires, nanotubes and nanosheets, is used to do the research. Adopted modern analytical methods and means, their lattice structure, surface/interface size and electronic state density distribution can be determined.Using microwave parameters testing system and method, their conductivity and dielectric constant can be obtained.Using reflectance amplitude comparison method and four parameter bow testing technology, high -temperature microwave loss characteristics of the composite can be studied. On the basis of the above, we look at the basic theory of interface electron scattering, interfacial polarization and relaxation process of nanometer semiconductor. Through the scientific computing gain relevant parameters of interface scattering and interfacial polarization. According to the semiconductor band theory, solid polarization and relaxation theory, electromagnetic scattering theory and computational electromagnetics, from the source of the interaction of electromagnetic wave and nanosemiconductor interface, solve the scientific questions of high- temperature microwave absorbing. This project has obvious interdisciplinary and comprehensive study characteristic, and at the same time and have very prominent theory, method and technology integration innovation characteristics. The research results not only can fill theory blank of microwave and nano- material interaction , but also can enhance the design level of high –temperature absorbing material, promote the development of the stealth technology.

以宽带半导体SiC纳米材料（纳米粒子、纳米线、纳米管和纳米片）为对象，采用材料现代分析方法和手段，确定其晶格结构、表面/界面尺寸及其电子态密度分布。采用微波参数测试系统和方法，获得SiC纳米材料及其复合材料的电导率和介电常数等参数的温度特性数据；采用反射率幅度比较法和四参量弓形测试技术，研究复合材料的高温微波损耗特性；以实验为基础，着眼于SiC纳米材料表面/界面电子散射和界面极化及其弛豫过程的基本理论，利用科学计算获得影响纳米材料表面散射和表面极化的相关参数，借鉴半导体能带理论、固体极化与弛豫理论、电磁散射理论和计算电磁学的研究思路，从电磁波与纳米表面电子态相互作用的源头上，解决纳米吸波材料高温微波损耗的科学问题。本项目具有明显的多学科交叉与综合研究特点，同时又有十分突出的理论、方法和技术集成创新特征。其研究结果除可以填补微波与纳米材料相互作用理论空白外，还可以增强高温吸波材料设计的水平。

低维化合物半导体具有一些优异的力学、热学、电学和光学性能，在能源、生物医学、微波吸收、微电子机械系统(MEMS)和光电子器件领域有广阔的应用前景。尤其是SiC等纳米材料，在开发下一代纳米电子和光子器件方面占有重要的地位。.本项目主要以SiC纳米线、纳米管等低维半导体为对象，通过研究表面的缺陷、杂质、悬挂键及官能团对其电子输运和介电性质影响，揭示这些纳米材料表面极化因子的作用机制，力图从表面电子态的层面解决纳米材料微波衰减的科学问题。.本项目在SiC纳米线和纳米管电荷输运机制，空位和杂质缺陷、表面悬挂键、极性官能团（羟基）的作用机理等方面取得若干重要成果，获得的一些实验数据和数值模拟结果对加深半导体理论，促进微纳电子器件的发展具有科学意义。