基于微腔耳语回廊模式多波长硅波导III-V半导体光发射芯片研究

Chip optical interconnect provides faster transmission capacity and lower power consumption. The development of optical interconnect photonic integrated circuits requires efficient, stable and reliable light source based on silicon substrate. However, due to the indirect bandgap properties of silicon material, light bottleneck problem has always been hampered further development in this field. The project studies the multi-wavelength whispering gallery mode silicon waveguide III-V semiconductor light-emitting chip related physical problems and design and manufacturing technology, including monolithic integration, coupling and packaging etc. Specific research laser mode losses, the design and optimization of silicon-based III-V laser resonator structure, thermal stability and thermal issues of III-V and silicon integrated systems, as well as hybrid integrated multi-wavelength optical transmitter chip optical, electrical microwave test technology. It will provide useful theoretical and experimental support for further extending the functionality in the optical interconnection in silicon wafer and improving the degree of integration of photonic integrated circuits.

光互连芯片有希望提供更快的传输容量以及更低的能耗。硅基片内光互联和光子集成回路的发展需要高效、稳定、可靠的光源。但是由于硅材料的间接带隙特性，光源问题一直以来都是阻碍这一领域进一步发展的瓶颈。本项目研究耳语回廊模式多波长硅波导III-V半导体光发射芯片的相关物理问题和设计制造技术，研究单片集成、耦合和封装所涉及的相关难点。具体研究激光模式损耗、硅基III-V微纳谐振腔激光器结构的设计与优化、III-V和硅集成系统的热稳定性问题和散热问题、以及混合集成多波长光发射芯片的光、电、微波测试方案。从而掌握光电子集成的关键制造和封装工艺，为高密度、大容量、低功耗的片上和片间光互连奠定基础。并以此为基础探索硅基波导与其他有源器件键合的可能性。为进一步拓宽片内光互联的功能，提高光子集成回路的集成度提供理论依据和技术准备。

基于建立的半导体微腔激光器特性的模型,提出了一种耦合微球和波导系统的有效方法，研究微腔和波导系统的耦合特性，采用有限时域差分法设计了一个数值仿真系统，给出了半导体微腔激光器瞬态响应的仿真结果及载流子密度和光子密度的图谱特性，得到了波长范围从600-1000nm的相对强度谱曲线和传输谱曲线，分析了自发辐射因子注入电流和腔长对微腔激光器的激射阈值、延迟时间、驰豫振荡频率和光输出等参量的影响，研究结果为半导体微腔激光器的工艺制作，改善了高频调制特性和优化器件结构。实验中采用热拉技术制得了锥形光纤，用来作为激发微球腔中回音壁模式的波导．测试了这个微球腔-锥形光纤耦合系统，通过优化微球腔与锥形光纤的相对位置得到其品质因数高达2.3*106，耦合效率高达92.5%，表明了其在实际微腔传感和微型激光器中极具潜力。